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Fully automated, high-performance PECVD equipment SA-EPEE i200
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SA-EPEE i200
| Wafer Size | 6″, 8″ |
|---|---|
| Substrate Type | Si, SiC, W, TiN, Ti, TiW |
| Standard Configuration | SMIFĆ3+EFEMĆ1+LLĆ2+TMĆ1+PMĆ3 |
| Wafer Station | Twins chamber, 2 pcs/chamber, max 6pcs for 3 chambers |
| Automation | Open cassette/SMIF |
| Process | SiO2/SiNx/TEOS/BPSG |
| Deposit Materials | BPSG, SiO2, SiNx, SiON, TEOS SiO2 |
| Uniformity | WIW ā¤3.0%ćWTWā¤3.0%ćRTRā¤3.0% |
| Gas Configuration | TEOS/TEPO/TEB/O2/SiH4/NH3/N2O/He/N2/NF3/Ar(RPS) |
| Cooling Module | EFFM cooling buffer |
| Foot print | 2100Ć3360(7.0m2) |
| WPH(relative) | 1.20 |
| CoC(relative) | 0.83 |
| CoO(relative) | 0.75 |
| Clean Mode | RPS clean,>2Ī¼m/min |
| Size(LĆWĆH) | 2100mmĆ3360mmĆ2600mm |