SA-EPEE i200 is an automated 150/200mm PECVD equipment for Si, SiC and GaAs wafers. Adopting twin-chamber design with dual-frequency RF, it deposits SiO2, SiNx, TEOS and BPSG films with ≤3% cross-wafer uniformity. Integrated with EFEM cooling and RPS in-situ cleaning, it raises throughput by 20%, cuts footprint and reduces CoC & CoO, fully optimized for mass production of power semiconductors and logic chips.
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Feature |
Application |
|---|---|
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Precess control ability with SiH4、TEOS process：
|
Parameter |
SiH4 Base |
TEOS Base |
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|---|---|---|---|---|---|---|
|
SiH4-SiO2 |
SiNx |
SiON |
BPSG |
TEOS-SiO2 |
BPSG |
|
|
Gas Line |
10 |
7 |
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Thickness(A) |
200~20000 |
200~10000 |
200~2000 |
300~20000 |
300~20000 |
300~20000 |
|
DR(A/min) |
1000~15000 |
1000~15000 |
1000~10000 |
1000~15000 |
1000~15000 |
1000~15000 |
|
U%,1sigma |
1.5%、1.5%、1.5% |
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|
R.I |
1.5±0.05 |
2.0±0.2 |
1.7±0.1 |
1.46±0.02 |
1.46±0.02 |
1.46±0.02 |
|
Stress(MPa) |
-100,Tunable |
±100 |
-100 |
±100 |
±100 |
±100 |
|
PA(>0.20μm) |
<30 |
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Chamber Temperature |
70±5℃ |
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Process Temperature |
Max 550℃ |
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B/P |
- |
- |
- |
2~6% wt% |
- |
2~6% wt% |
Principle：
Tool and Facilities：
|
No. |
Module Name |
Quantity |
|
|---|---|---|---|
|
Tool |
1 |
Process Module(SiH4/TEOS/Carbon) |
3 |
|
2 |
Transfer Module(EFFM、Loadlock) |
1 |
|
|
3 |
SMIF(Pod)/Open cassette |
3 |
|
|
Facility |
4 |
Dry Pump(PM) |
3 |
|
5 |
Dry Pump(TM) |
2 |
|
|
6 |
Chiller |
1 |
|
|
7 |
RF Cabinet |
1 |
|
|
8 |
Power Supply Cabinet |
1 |
|
|
9 |
Transformer |
1 |
|
|
10 |
LDS(TEOS/TEPO/TEB) |
3 |
Capacity Requirements：
|
Tool Name |
1PM |
2PM |
3PM |
|---|---|---|---|
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Image |
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Application |
- EFEM + Loadlock - 2 Pod - 1 module - 2 wafers |
- EFEM + Loadlock - 2 Pod - 2 process modules - 4 wafers |
- EFEM + Loadlock - 3 Pod - 3 process modules - 6 wafers |
|
Footprint |
2850×2100×2600mm=6.0m2 |
2850×2100×2600mm=6.0m2 |
3360×2100×2600mm=7.0m2 |
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