Fully automated, high-performance PECVD equipment SA-EPEE i200
Fully automated, high-performance PECVD equipment SA-EPEE i200 Call for Price
Back to products
SiC Etcher SA-GDE C200L
SiC Etcher SA-GDE C200L Call for Price
SiC Etcher SA-GDE C200 - Image 1
SiC Etcher SA-GDE C200 - Image 2
Click to enlarge
SiC Etcher SA-GDE C200
SiC Etcher SA-GDE C200 - Image 2

SiC Etcher SA-GDE C200

19 People watching this product now!
SKU: SA-GDE C200

Ā Ā Ā Ā Ā Ā SA-GDE C200 is a high plasma density etcher designed for 6/8-inch SiC power, MEMS and GaAs RF devices, executing SiC trench, via and mark etching. With dual-coil RF source and 2650L/s turbo pump, it reaches 6000A/min SiC etch rate. Y2O3-coated components reduce contamination, delivering long MTBC and reliable mass-production performance for wide-bandgap semiconductors.Ā 

Call for Price

(Price on request)

Compare
Add to wishlist

Description

Datasheet

SA-GDE C200 is a high plasma density etcher designed for 6/8-inch SiC power, MEMS and GaAs RF devices, executing SiC trench, via and mark etching. With dual-coil RF source and 2650L/s turbo pump, it reaches 6000A/min SiC etch rate. Y2O3-coated components reduce contamination, delivering long MTBC and reliable mass-production performance for wide-bandgap semiconductors.

Feature

Application
  • Higher Plasma Density
  • Comparable
  • Higher ER
  • More Stable
  • Longer duration
  • BAW
  • SiC Power
  • VCSEL
  • MEMS
  • GaN/GaAs RF

Principleļ¼š

Specification

Features

Wafer Size6″, 8″
Etching MaterialsPolymer, AlScN, SiC, SiO2, SiN

General

ProcessesSiC trench/SiC Via/SiC Mark
Source-RFDual coil,13.56MHz
Source Range3000W+3000W
Bias-RF13.56MHz
Top WindowChiller heating
ESCDual electrode
Turbo2650L/s
Gas InjectorSymmetric 8 injectors
Surface TreatementY2O3 Coating
Maintain Time3h
SiC Etch Rate6000A/min
PA> 0.2Ī¼m < 30ea
MTBC200RFH
Metal ContaminationFree
Size(LƗWƗH)3279mmƗ3253mmƗ2339mm

Customer Reviews

0 reviews
0
0
0
0
0

Reviews

Clear filters

There are no reviews yet.

Be the first to review “SiC Etcher SA-GDE C200”

Your email address will not be published. Required fields are marked *

1 2 3 4 5
1 2 3 4 5
1 2 3 4 5

Related Products
Compare
Quick view
Add to wishlist

Electron Beam Evaporation System SA-VKE1100D/E1500D

, ,

In stock

Call for Price
Read more
SKU: SA-VKE1100D/E1500D
Number of Crucibles(max.)4
Power Supply(max.)10kW
Film thickness monitoringCrystal oscillator controller
Ion SourceRF & Kaufman & Hall ion source
Fixture typesDome & Planetary
Pumping SystemCryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump
Coating UniformityĀ±2%
Coating RepeatabilityĀ±2%
Uniform Deposition Area(max.)Ƙ960ā€Æmm
Ultimate Vacuum1E-5Pa
Vacuum MeasurementFull-range vacuum gauge
Temperature RangeRT~300ā„ƒ
Size(LƗWƗH)4.4mƗ4.1mƗ2.6m
Compare
Quick view
Add to wishlist

Electron Beam Evaporation System SA-VKE1500Pro

, ,

In stock

Call for Price
Read more
SKU: SA-VKE1500Pro
Number of Crucibles(max.)8
Power Supply(max.)10kW
Film thickness monitoringCrystal oscillator controller
Ion SourceRF & Kaufman & Hall ion source
Fixture typesDome & Knudsen & Planetary
Pumping SystemCryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump
Coating UniformityĀ±2%
Coating RepeatabilityĀ±2%
Uniform Deposition Area(max.)12ƗƘ200ā€Æmm
Ultimate Vacuum2E-5Pa
Vacuum MeasurementFull-range vacuum gauge
Temperature RangeRT~200ā„ƒ
Size(LƗWƗH)8.5mƗ5.5mƗ3.3m
Compare
Quick view
Add to wishlist

Electron Beam Evaporation System SA-VKE360

, ,

In stock

Call for Price
Read more
SKU: SA-VKE360
Number of Crucibles(max.)6
Power Supply(max.)10kW
Automatic LoadlocksSingle &multi-chip automatic laodlock
Workpiece Angle-45Ā°~45Ā°ļ¼Œadjustable
Film thickness monitoringCrystal oscillator controller
Ion SourceHall ion source
Fixture typesDome & Plate
Pumping SystemCryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump
Coating UniformityĀ±3%
Coating RepeatabilityĀ±2%
Uniform Deposition Area(max.)Ƙ200ā€Æmm
Ultimate Vacuum1E-5Pa
Vacuum MeasurementFull-range vacuum gauge
Temperature Range-50~300ā„ƒ
Size(LƗWƗH)3.15mƗ2.4mƗ2.2m
Compare
Quick view
Add to wishlist

Fully automatic slot developing manchine SA-SDM-48LS

,

In stock

Call for Price
Read more
SKU: SA-SDM-48LS
Wafer Size4″~6″
Cleaning Capacity25pieces2baskets or 4baskets/batch
Compare
Quick view
Add to wishlist

General PVD System SA-Polaris BM620

, ,

In stock

Call for Price
Read more
SKU: SA-Polaris BM620
Wafer Size6″, 8″
THK mean(A)1500Ā±75(Ni), 2000Ā±100(Ti), 10KĀ±500(Ag)
Rs Mean(Ī©/ā–”)0.6Ā±0.1(Ni), 2.9Ā±0.3(Ti), 0.021Ā±0.005(Ag)
Rs U%(WIW,%,16)< 3@EE3
Infilm Particle< 30ea@0.3Ī¼m
Size(LƗWƗH)2700mmƗ3200mmƗ2200mm, 4400mmƗ3100mmƗ2200mm
Compare
Quick view
Add to wishlist

Magnetron Sputter System SA-VKM800

, ,

In stock

Call for Price
Read more
SKU: SA-VKM800
Number of Cathodes(max.)4
Sputtering Power SupplyDC / RF / pulsed DC, freely switchable
Ion SourceRF & Kaufman & Hall ion source
BiasRF / pulsed DC
Vacuum Sampling ChamberMulti-wafer fully-automatic sampling chamber, optional
Pumping SystemCryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump
Flow ControlDigital mass flow meter
Coating UniformityĀ±1.5%
Coating RepeatabilityĀ±2%
Uniform Deposition Area(max.)5ƗƘ300ā€Æmm
Ultimate Vacuum1E-5Pa
Vacuum MeasurementFull-range vacuum gauge + ā€ŒCapacitance diaphragm gauge
Temperature Range-50~800ā„ƒ
Size(LƗWƗH)3.2mƗ3.3mƗ2.2m