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Dielectric Etcher SA-NMC508SDH/SDL
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SA-NMC508SDH/SDL
| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | Dielectric SiO2, Dielectric SiNx, Dielectric SiON |
| Processes | FEOL/BEOL(HM/CT/Spacer/Via/PAD) |
| SHD | Si(SDH), Al-Y2O3 coating(SDL) |
| Gas Injection | Dual zone inject(10-90% adj) |
| Temp Control | Chiller |
| Cathode | Dual zone ESC |
| Process Mode | Clean Mode(SDL) |
| Etch Rate(ER) | > 4500 A/min(SDH), >6000 A/min(SDL) |
| Sidewall Roughness | < 1 nm(SDH) |
| U% | WIW < 3% @ EE3mm, WTW < 3% |
| WPH | ~ 10 @15K(SDH), 12 @10K(SDL) |
| COC | 1 |
| MTTR | <1h(SDH) |
| MTBC | > 200 RFh(SDH), > 150 RFh(SDL) |
| Size(L×W×H) | 3279mm×3253mm×2339mm |