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SiC Etcher SA-GDE C200
In stock
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SKU:
SA-GDE C200
| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | Polymer, AlScN, SiC, SiO2, SiN |
| Processes | SiC trench/SiC Via/SiC Mark |
| Source-RF | Dual coil,13.56MHz |
| Source Range | 3000W+3000W |
| Bias-RF | 13.56MHz |
| Top Window | Chiller heating |
| ESC | Dual electrode |
| Turbo | 2650L/s |
| Gas Injector | Symmetric 8 injectors |
| Surface Treatement | Y2O3 Coating |
| Maintain Time | 3h |
| SiC Etch Rate | 6000A/min |
| PA | > 0.2Ī¼m < 30ea |
| MTBC | 200RFH |
| Metal Contamination | Free |
| Size(LĆWĆH) | 3279mmĆ3253mmĆ2339mm |
SiC Etcher SA-GDE C200L
In stock
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SKU:
SA-GDE C200L
| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | SiO2, SiN, Polymer, AlScN, SiC |
| Processes | SiC trench/SiC Via/Sic Mark |
| SRF Frequency | 2MHz |
| SRF Power | 2500W |
| SRF Coil | ICP Cubic |
| BRF Frequency | 13.56MHz |
| BRF Power | 1500W |
| Wall | RT~80ā(Adjustable) |
| Upper Electrode | RT~120ā(Adjustable) |
| Bottom Electrode | Clamp chuck:-20~300ā(Max400ā),E chuck:-20~90ā |
| Wafer Clampage | ESC/Mechanical damp |
| Turbo Pump | BOC,2650L/s |
| Injection | TOP,Center |
| MFC | 8 gas/12 gas |
| EPD | OES/LEP&CCD |
| Surface Treatment | Roughness coating |
| Open Method | Electrical |