Dielectric Etcher SA-NMC508SDH/SDL
Dielectric Etcher SA-NMC508SDH/SDL
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SiC Etcher SA-GDE C200
SiC Etcher SA-GDE C200
SiC Etcher SA-GDE C200L - Image 1
SiC Etcher SA-GDE C200L - Image 2
SiC Etcher SA-GDE C200L
SiC Etcher SA-GDE C200L - Image 2

SiC Etcher SA-GDE C200L

SKU: SA-GDE C200L

      SA-GDE C200L is an upgraded high-density etcher for 6/8-inch wide-bandgap semiconductors including SiC, GaAs and InP. It supports dual clamping modes of ESC and mechanical clamp with wide temperature range from -20℃ to 300℃. Equipped with dual-frequency RF and multi-point gas injection, it features flexible process windows and reliable etching performance for diversified compound semiconductor mass production. 

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Description

Datasheet

SA-GDE C200L is an upgraded high-density etcher for 6/8-inch wide-bandgap semiconductors including SiC, GaAs and InP. It supports dual clamping modes of ESC and mechanical clamp with wide temperature range from -20℃ to 300℃. Equipped with dual-frequency RF and multi-point gas injection, it features flexible process windows and reliable etching performance for diversified compound semiconductor mass production.

Feature

Application
  • Symmetric Chamber Design
  • High Conductance Pumping System
  • Better U%
  • PA Control
  • Convenient
  • BAW
  • SiC Power
  • VCSEL
  • MEMS
  • GaN/GaAs RF

Principle：

Specification

Features

Wafer Size6″, 8″

General

Etching MaterialsAlScN, Polymer, SiC, SiN, SiO2
ProcessesSiC trench/SiC Via/Sic Mark
SRF Frequency2MHz
SRF Power2500W
SRF CoilICP Cubic
BRF Frequency13.56MHz
BRF Power1500W
WallRT~80℃(Adjustable)
Upper ElectrodeRT~120℃(Adjustable)
Bottom ElectrodeClamp chuck:-20~300℃(Max400℃),E chuck:-20~90℃
Wafer ClampageESC/Mechanical damp
Turbo PumpBOC,2650L/s
InjectionTOP,Center
MFC8 gas/12 gas
EPDOES/LEP&CCD
Surface TreatmentRoughness coating
Open MethodElectrical

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