SiC Etcher SA-GDE C200
SiC Etcher SA-GDE C200 Call for Price
Back to products
Dielectric Etcher SA-NMC508SDH/SDL
Dielectric Etcher SA-NMC508SDH/SDL Call for Price
SiC Etcher SA-GDE C200L - Image 1
SiC Etcher SA-GDE C200L - Image 2
Click to enlarge
SiC Etcher SA-GDE C200L
SiC Etcher SA-GDE C200L - Image 2

SiC Etcher SA-GDE C200L

19 People watching this product now!
SKU: SA-GDE C200L

      SA-GDE C200L is an upgraded high-density etcher for 6/8-inch wide-bandgap semiconductors including SiC, GaAs and InP. It supports dual clamping modes of ESC and mechanical clamp with wide temperature range from -20℃ to 300℃. Equipped with dual-frequency RF and multi-point gas injection, it features flexible process windows and reliable etching performance for diversified compound semiconductor mass production. 

Feature

  • Symmetric Chamber Design
  • High Conductance Pumping System
  • Better U%
  • PA Control
  • Convenient
 Application

  • BAW
  • SiC Power
  • VCSEL
  • MEMS
  • GaN/GaAs RF

Specifications：

Parameter

Descriptions

Wafer Size

6/8inch

Etching Materials

SiC/SiO2/SiN/Polymer/AlScN

Processes

SiC trench/SiC Via/Sic Mark

SRF Frequency

2MHz

SRF Power

2500W

SRF Coil

ICP Cubic

BRF Frequency

13.56MHz

BRF Power

1500W

Wall

RT~80℃(Adjustable)

Upper Electrode

RT℃~120℃(Adjustable)

Bottom Electrode

Clamp chuck:-20~300℃(Max400℃)

E chuck:-20~90℃

Wafer Clampage

ESC/Mechanical damp

Turbo Pump

BOC,2650L/s

Injection

TOP,Center

MFC

8 gas/12 gas

EPD

OES/LEP&CCD

Surface Treatment

Roughness coating

Open Method

Electrical

 

Call for Price

(Price on request)

Compare
Add to wishlist

Description

Datasheet

SA-GDE C200L is an upgraded high-density etcher for 6/8-inch wide-bandgap semiconductors including SiC, GaAs and InP. It supports dual clamping modes of ESC and mechanical clamp with wide temperature range from -20℃ to 300℃. Equipped with dual-frequency RF and multi-point gas injection, it features flexible process windows and reliable etching performance for diversified compound semiconductor mass production.

Feature

Application
  • Symmetric Chamber Design
  • High Conductance Pumping System
  • Better U%
  • PA Control
  • Convenient
  • BAW
  • SiC Power
  • VCSEL
  • MEMS
  • GaN/GaAs RF

Principle：

Specification

Features

Wafer Size6″, 8″
Etching MaterialsAlScN, SiC, SiO2, SiN, Polymer

General

ProcessesSiC trench/SiC Via/Sic Mark
SRF Frequency2MHz
SRF Power2500W
SRF CoilICP Cubic
BRF Frequency13.56MHz
BRF Power1500W
WallRT~80℃(Adjustable)
Upper ElectrodeRT~120℃(Adjustable)
Bottom ElectrodeClamp chuck:-20~300℃(Max400℃),E chuck:-20~90℃
Wafer ClampageESC/Mechanical damp
Turbo PumpBOC,2650L/s
InjectionTOP,Center
MFC8 gas/12 gas
EPDOES/LEP&CCD
Surface TreatmentRoughness coating
Open MethodElectrical

Customer Reviews

0 reviews
0
0
0
0
0

Reviews

Clear filters

There are no reviews yet.

Be the first to review “SiC Etcher SA-GDE C200L”

Your email address will not be published. Required fields are marked *

1 2 3 4 5
1 2 3 4 5
1 2 3 4 5

Related Products
Compare
Quick view
Add to wishlist

Electron Beam Evaporation System SA-VKE360

, ,

In stock

Call for Price
Read more
SKU: SA-VKE360
Number of Crucibles(max.)6
Power Supply(max.)10kW
Automatic LoadlocksSingle &multi-chip automatic laodlock
Workpiece Angle-45°~45°，adjustable
Film thickness monitoringCrystal oscillator controller
Ion SourceHall ion source
Fixture typesDome & Plate
Pumping SystemCryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump
Coating Uniformity±3%
Coating Repeatability±2%
Uniform Deposition Area(max.)Ø200 mm
Ultimate Vacuum1E-5Pa
Vacuum MeasurementFull-range vacuum gauge
Temperature Range-50~300℃
Size(L×W×H)3.15m×2.4m×2.2m
Compare
Quick view
Add to wishlist

Electron Beam Evaporation System SA-VKE550/E800

, ,

In stock

Call for Price
Read more
SKU: SA-VKE500/E800
Number of Crucibles(max.)8
Power Supply(max.)10kW
Automatic LoadlocksSingle &multi-chip automatic laodlock
Film thickness monitoringCrystal oscillator controller
Ion SourceRF & Kaufman & Hall ion source
Fixture typesDome & Knudsen & Planetary &Plate
Pumping SystemCryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump
Coating Uniformity±3%
Coating Repeatability±2%
Uniform Deposition Area(max.)Ø300 mm
Ultimate Vacuum1E-5Pa
Vacuum MeasurementFull-range vacuum gauge
Temperature RangeRT~300℃
Size(L×W×H)3.35m×2.8m×2.2m
Compare
Quick view
Add to wishlist

General PVD System SA-Polaris BM620

, ,

In stock

Call for Price
Read more
SKU: SA-Polaris BM620
Wafer Size6″, 8″
THK mean(A)1500±75(Ni), 2000±100(Ti), 10K±500(Ag)
Rs Mean(Ω/□)0.6±0.1(Ni), 2.9±0.3(Ti), 0.021±0.005(Ag)
Rs U%(WIW,%,16)< 3@EE3
Infilm Particle< 30ea@0.3μm
Size(L×W×H)2700mm×3200mm×2200mm, 4400mm×3100mm×2200mm
Compare
Quick view
Add to wishlist

Indium Evaporation System SA-VKT550I

, ,

In stock

Call for Price
Read more
SKU: SA-VKT550I
Power Supply(max.)8kW
Workpiece Angle-45°~45°，adjustable
Film thickness monitoringCrystal oscillator controller
Ion SourceKaufman & Hall ion source
Fixture typesDome & Knudsen & Plate
Pumping SystemCryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump
Coating Uniformity±3%
Coating Repeatability±2%
Uniform Deposition Area(max.)Ø300 mm
Ultimate Vacuum1E-5Pa
Vacuum MeasurementFull-range vacuum gauge
Temperature Range-80~200℃
Size(L×W×H)3.3m×2.7m×2.2m
Compare
Quick view
Add to wishlist

Magnetron Sputter System SA-VKM800

, ,

In stock

Call for Price
Read more
SKU: SA-VKM800
Number of Cathodes(max.)4
Sputtering Power SupplyDC / RF / pulsed DC, freely switchable
Ion SourceRF & Kaufman & Hall ion source
BiasRF / pulsed DC
Vacuum Sampling ChamberMulti-wafer fully-automatic sampling chamber, optional
Pumping SystemCryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump
Flow ControlDigital mass flow meter
Coating Uniformity±1.5%
Coating Repeatability±2%
Uniform Deposition Area(max.)5×Ø300 mm
Ultimate Vacuum1E-5Pa
Vacuum MeasurementFull-range vacuum gauge + ‌Capacitance diaphragm gauge
Temperature Range-50~800℃
Size(L×W×H)3.2m×3.3m×2.2m
Compare
Quick view
Add to wishlist

Metal Etcher SA-NMC508SEM

, ,

In stock

Call for Price
Read more
SKU: SA-NMC508SEM
Wafer Size8″, 6″
Etching MaterialsAlCu, AlSiCu, W, TiN, Ti, TiW
ProcessesTM/IM/WEB
CoilDual Coil
Match ModeFully automatic matching
Upper frequency13.56MHz
Window HeatingHeater Heating
Chamber HeatingChiller
Pump1600L/s
N2 Pressure ControlY
Throughput6K/M
MTBC350RFh
Size(L×W×H)3250mm×2580mm×2397mm