SA-VKT550I is a custom-built thermal resistance evaporation platform, specially optimized for ultra-precise indium bump formation. Boasting consistent reliable output, comprehensive automated operation and low upkeep costs, it fully satisfies stringent process standards for advanced flip-chip interconnection and bonding.
SA-VKT550I is a custom-built thermal resistance evaporation platform, specially optimized for ultra-precise indium bump formation. Boasting consistent reliable output, comprehensive automated operation and low upkeep costs, it fully satisfies stringent process standards for advanced flip-chip interconnection and bonding.
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Feature |
Application |
|---|---|
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Principle：
Features
| Uniform Deposition Area(max.) | Ø300 mm |
|---|---|
| Ultimate Vacuum | 1E-5Pa |
General
| Power Supply(max.) | 8kW |
|---|---|
| Workpiece Angle | -45°~45°，adjustable |
| Film thickness monitoring | Crystal oscillator controller |
| Ion Source | Kaufman & Hall ion source |
| Fixture types | Dome & Knudsen & Plate |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Coating Uniformity | ±3% |
| Coating Repeatability | ±2% |
| Vacuum Measurement | Full-range vacuum gauge |
| Temperature Range | -80~200℃ |
| Size(L×W×H)or(D×W×H) | 3.3m×2.7m×2.2m |
In stock
| Number of Crucibles(max.) | 6 |
|---|---|
| Power Supply(max.) | 10kW |
| Automatic Loadlocks | Single &multi-chip automatic laodlock |
| Workpiece Angle | -45°~45°，adjustable |
| Film thickness monitoring | Crystal oscillator controller |
| Ion Source | Hall ion source |
| Fixture types | Dome & Plate |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Coating Uniformity | ±3% |
| Coating Repeatability | ±2% |
| Uniform Deposition Area(max.) | Ø200 mm |
| Ultimate Vacuum | 1E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge |
| Temperature Range | -50~300℃ |
| Size(L×W×H)or(D×W×H) | 3.15m×2.4m×2.2m |
In stock
| Number of Crucibles(max.) | 6 |
|---|---|
| Automatic Loadlocks | Single &multi-chip automatic laodlock |
| Workpiece Angle | -45°~45°，adjustable |
| Power Supply(max.) | 10kW |
| Film thickness monitoring | Crystal oscillator controller |
| Ion Source | Kaufman & Hall ion source |
| Fixture types | Dome &Planetary |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Coating Uniformity | ±2% |
| Coating Repeatability | ±2% |
| Uniform Deposition Area(max.) | Ø260 mm |
| Ultimate Vacuum | 1E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge |
| Temperature Range | RT~500℃ |
| Size(L×W×H)or(D×W×H) | 3m×2.5m×2.2m |
In stock
| Wafer Size | 6″, 8″ |
|---|---|
| Standard Configuration | SMIF×3+EFEM×1+LL×2+TM×1+PM×3 |
| Wafer Station | Twins chamber, 2 pcs/chamber, max 6pcs for 3 chambers |
| Automation | Open cassette/SMIF |
| Process | SiO2/SiNx/TEOS/BPSG |
| Deposit Materials | BPSG, SiNx, SiO2, SiON, TEOS SiO2 |
| Uniformity | WIW ≤3.0%、WTW≤3.0%、RTR≤3.0% |
| Gas Configuration | TEOS/TEPO/TEB/O2/SiH4/NH3/N2O/He/N2/NF3/Ar(RPS) |
| Cooling Module | EFFM cooling buffer |
| Foot print | 2100×3360(7.0m2) |
| WPH(relative) | 1.20 |
| CoC(relative) | 0.83 |
| CoO(relative) | 0.75 |
| Clean Mode | RPS clean,>2μm/min |
| Size(L×W×H)or(D×W×H) | 2100mm×3360mm×2600mm |
In stock
| Number of Cathodes(max.) | 4 |
|---|---|
| Sputtering Power Supply | DC / RF / pulsed DC, freely switchable |
| Ion Source | RF & Kaufman & Hall ion source |
| Bias | RF / pulsed DC |
| Vacuum Sampling Chamber | Multi-wafer fully-automatic sampling chamber, optional |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Flow Control | Digital mass flow meter |
| Coating Uniformity | ±1.5% |
| Coating Repeatability | ±2% |
| Uniform Deposition Area(max.) | 5×Ø300 mm |
| Ultimate Vacuum | 1E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge + Capacitance diaphragm gauge |
| Temperature Range | -50~800℃ |
| Size(L×W×H)or(D×W×H) | 3.2m×3.3m×2.2m |
In stock
| Number of Cathodes(max.) | 2 |
|---|---|
| Sputtering Power Supply | DC / RF / pulsed DC, freely switchable |
| Ion Source | RF & Kaufman & Hall ion source |
| Bias | RF / pulsed DC |
| Vacuum Sampling Chamber | Single-wafer/multi-wafer fully-automatic sampling chamber, optional |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Flow Control | Digital mass flow meter |
| Coating Uniformity | ±2% |
| Coating Repeatability | ±2% |
| Uniform Deposition Area(max.) | Ø200 mm |
| Ultimate Vacuum | 1E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge + Capacitance diaphragm gauge |
| Temperature Range | -50~800℃ |
| Size(L×W×H)or(D×W×H) | 3.8m×2.8m×2.2m |
In stock
| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | AlScN, Polymer, SiC, SiN, SiO2 |
| Processes | SiC trench/SiC Via/SiC Mark |
| Source-RF | Dual coil,13.56MHz |
| Source Range | 3000W+3000W |
| Bias-RF | 13.56MHz |
| Top Window | Chiller heating |
| ESC | Dual electrode |
| Turbo | 2650L/s |
| Gas Injector | Symmetric 8 injectors |
| Surface Treatement | Y2O3 Coating |
| Maintain Time | 3h |
| SiC Etch Rate | 6000A/min |
| PA | > 0.2μm < 30ea |
| MTBC | 200RFH |
| Metal Contamination | Free |
| Size(L×W×H)or(D×W×H) | 3279mm×3253mm×2339mm |
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