Ā Ā Ā Ā Ā Ā SA-VKE550 and SA-VKE800 are general-purpose electron-beam evaporation systems. Delivering high-performance, stable and reliable operation, they feature advanced automated control routines and low-maintenance design to fulfill versatile requirements for both mass production and experimental platforms.Ā
SA-VKE550 and SA-VKE800 are general-purpose electron-beam evaporation systems. Delivering high-performance, stable and reliable operation, they feature advanced automated control routines and low-maintenance design to fulfill versatile requirements for both mass production and experimental platforms.
|
Feature |
Application |
|---|---|
|
|
Principleļ¼
Features
| Number of Crucibles(max.) | 8 |
|---|---|
| Uniform Deposition Area(max.) | Ć300āÆmm |
| Ultimate Vacuum | 1E-5Pa |
General
| Power Supply(max.) | 10kW |
|---|---|
| Automatic Loadlocks | Single &multi-chip automatic laodlock |
| Film thickness monitoring | Crystal oscillator controller |
| Ion Source | RF & Kaufman & Hall ion source |
| Fixture types | Dome & Knudsen & Planetary &Plate |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Coating Uniformity | Ā±3% |
| Coating Repeatability | Ā±2% |
| Vacuum Measurement | Full-range vacuum gauge |
| Temperature Range | RT~300ā |
| Size(LĆWĆH) | 3.35mĆ2.8mĆ2.2m |
In stock
| Number of Crucibles(max.) | 6 |
|---|---|
| Automatic Loadlocks | Single &multi-chip automatic laodlock |
| Workpiece Angle | -45Ā°~45Ā°ļ¼adjustable |
| Power Supply(max.) | 10kW |
| Film thickness monitoring | Crystal oscillator controller |
| Ion Source | Kaufman & Hall ion source |
| Fixture types | Dome & Planetary |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Coating Uniformity | Ā±2% |
| Coating Repeatability | Ā±2% |
| Uniform Deposition Area(max.) | Ć300āÆmm |
| Ultimate Vacuum | 1E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge |
| Temperature Range | RT~500ā |
| Size(LĆWĆH) | 4.0mĆ3.1mĆ2.9m |
In stock
| Wafer Size | 6″, 8″ |
|---|---|
| Substrate Type | TiW, Si, SiC, W, TiN, Ti |
| Standard Configuration | SMIFĆ3+EFEMĆ1+LLĆ2+TMĆ1+PMĆ3 |
| Wafer Station | Twins chamber, 2 pcs/chamber, max 6pcs for 3 chambers |
| Automation | Open cassette/SMIF |
| Process | SiO2/SiNx/TEOS/BPSG |
| Deposit Materials | SiO2, SiNx, SiON, TEOS SiO2, BPSG |
| Uniformity | WIW ā¤3.0%ćWTWā¤3.0%ćRTRā¤3.0% |
| Gas Configuration | TEOS/TEPO/TEB/O2/SiH4/NH3/N2O/He/N2/NF3/Ar(RPS) |
| Cooling Module | EFFM cooling buffer |
| Foot print | 2100Ć3360(7.0m2) |
| WPH(relative) | 1.20 |
| CoC(relative) | 0.83 |
| CoO(relative) | 0.75 |
| Clean Mode | RPS clean,>2Ī¼m/min |
| Size(LĆWĆH) | 2100mmĆ3360mmĆ2600mm |
In stock
| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | Si, PolySi |
| Processes | Poly EB/STI/Poly gate/CT Si |
| Coil | Dual Zone |
| Match Mode | L-Match |
| Magnetic Shield | Yes |
| Gas Injector | Dual Zone |
| FRC | Yes |
| Liner | Symmetric Grid |
| Edge Ring | CIP version |
| ESC | Dual Zone |
| ESC Materials | Ceramic |
| Lift Pin | Ceramic |
| Turbo | 1600L/s |
| Chamber | Symmetric |
| Size(LĆWĆH) | 3279mmĆ3253mmĆ2339mm |
In stock
| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | SiC, SiO2, SiN, Polymer, AlScN |
| Processes | SiC trench/SiC Via/Sic Mark |
| SRF Frequency | 2MHz |
| SRF Power | 2500W |
| SRF Coil | ICP Cubic |
| BRF Frequency | 13.56MHz |
| BRF Power | 1500W |
| Wall | RT~80ā(Adjustable) |
| Upper Electrode | RT~120ā(Adjustable) |
| Bottom Electrode | Clamp chuck:-20~300ā(Max400ā),E chuck:-20~90ā |
| Wafer Clampage | ESC/Mechanical damp |
| Turbo Pump | BOC,2650L/s |
| Injection | TOP,Center |
| MFC | 8 gas/12 gas |
| EPD | OES/LEP&CCD |
| Surface Treatment | Roughness coating |
| Open Method | Electrical |
In stock
| Wafer Size | 6″, 8″ |
|---|---|
| Process | FOX/STI Anneal/Pad-Oxide/Gate Oxide/BPSG Reflow/Final Alloy/Cu Anneal/N2 Anneal/Polyimide Cure |
| Compatible Materials | Si, SiC, GaN |
| Teamperature Control Accuracy | ā¤Ā±1ā |
| Flat Zone Length | 860mm |
| Batch Size | 150/125 |
| SMIF/Open Cassette/OHT | Option |
| N2 Load Lock | Option |
| AGC | Option |
| Particle Control | ā¤20@0.16Ī¼m |
| Uniformity(WIW/WTW/LTL) | ā¤2%/1.5%/1.5% |
| Metal Contamination (ICP-MS/TXRF) | 5E10 |
| Loccalization Progress | Continuous improvement |
| Size(LĆWĆH) | 4420mmĆ900mmĆ3302mm, 4093mmĆ900mmĆ3302mm |
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