Ā Ā Ā Ā Ā Ā SA-VKM800 is a high-precision magnetron sputter system. It delivers superior coating uniformity and features low-maintenance design, fulfilling both mass-production and laboratory requirements for high-precision reactive magnetron sputtering and hole-filling processes.Ā
Feature
|
Application
|
Specificationsļ¼
|
Parameter |
Descriptions |
|---|---|
|
Number of Cathode |
4(max.) |
|
Sputtering Power Supply |
DC / RF / pulsed DC, freely switchable |
|
Ion Source |
RF & Kaufman & Hall ion source |
|
Bias |
RF / pulsed DC |
|
Vacuum Sampling Chamber |
Multi-wafer fully-automatic sampling chamber, optional |
|
Pumping System |
Cryopump / magnetically levitated turbo-molecular pump |
|
Flow Control |
Digital mass flow meter |
|
Coating Uniformity |
Ā±1.5% |
|
Coating Repeatability |
Ā±2% |
|
Uniform Deposition Area |
5ĆĆ300āÆmm(max.) |
|
Ultimate Vacuum |
1E-5Pa |
|
Vacuum Measurement |
Full-range vacuum gauge + āCapacitance diaphragm gauge |
|
Temperature Control Range |
-50~800ā |
|
Space Requirements(LĆWĆH,m) |
3.2Ć3.3Ć2.2 |
Ā Ā SA-VKM800 is a high-precision magnetron sputter system. It delivers superior coating uniformity and features low-maintenance design, fulfilling both mass-production and laboratory requirements for high-precision reactive magnetron sputtering and hole-filling processes.
|
Feature |
Application |
|---|---|
|
|
Principleļ¼
Features
| Number of Cathodes(max.) | 4 |
|---|---|
| Uniform Deposition Area(max.) | 5ĆĆ300āÆmm |
| Ultimate Vacuum | 1E-5Pa |
General
| Sputtering Power Supply | DC / RF / pulsed DC, freely switchable |
|---|---|
| Ion Source | RF & Kaufman & Hall ion source |
| Bias | RF / pulsed DC |
| Vacuum Sampling Chamber | Multi-wafer fully-automatic sampling chamber, optional |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Flow Control | Digital mass flow meter |
| Coating Uniformity | Ā±1.5% |
| Coating Repeatability | Ā±2% |
| Vacuum Measurement | Full-range vacuum gauge + āCapacitance diaphragm gauge |
| Temperature Range | -50~800ā |
| Size(LĆWĆH) | 3.2mĆ3.3mĆ2.2m |
In stock
| Wafer Size | 8″, 6″ |
|---|---|
| Etching Materials | Dielectric SiO2, Dielectric SiNx, Dielectric SiON |
| Processes | FEOL/BEOL(HM/CT/Spacer/Via/PAD) |
| SHD | Si(SDH), Al-Y2O3 coating(SDL) |
| Gas Injection | Dual zone inject(10-90% adj) |
| Temp Control | Chiller |
| Cathode | Dual zone ESC |
| Process Mode | Clean Mode(SDL) |
| Etch Rate(ER) | > 4500 A/min(SDH), >6000 A/min(SDL) |
| Sidewall Roughness | < 1 nm(SDH) |
| U% | WIW < 3% @ EE3mm, WTW < 3% |
| WPH | ~ 10 @15K(SDH), 12 @10K(SDL) |
| COC | 1 |
| MTTR | <1h(SDH) |
| MTBC | > 200 RFh(SDH), > 150 RFh(SDL) |
| Size(LĆWĆH) | 3279mmĆ3253mmĆ2339mm |
In stock
| Number of Crucibles(max.) | 8 |
|---|---|
| Power Supply(max.) | 10kW |
| Film thickness monitoring | Crystal oscillator controller |
| Ion Source | RF & Kaufman & Hall ion source |
| Fixture types | Dome & Knudsen & Planetary |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Coating Uniformity | Ā±2% |
| Coating Repeatability | Ā±2% |
| Uniform Deposition Area(max.) | 12ĆĆ200āÆmm |
| Ultimate Vacuum | 2E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge |
| Temperature Range | RT~200ā |
| Size(LĆWĆH) | 8.5mĆ5.5mĆ3.3m |
In stock
| Number of Crucibles(max.) | 6 |
|---|---|
| Power Supply(max.) | 10kW |
| Automatic Loadlocks | Single &multi-chip automatic laodlock |
| Workpiece Angle | -45Ā°~45Ā°ļ¼adjustable |
| Film thickness monitoring | Crystal oscillator controller |
| Ion Source | Hall ion source |
| Fixture types | Dome & Plate |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Coating Uniformity | Ā±3% |
| Coating Repeatability | Ā±2% |
| Uniform Deposition Area(max.) | Ć200āÆmm |
| Ultimate Vacuum | 1E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge |
| Temperature Range | -50~300ā |
| Size(LĆWĆH) | 3.15mĆ2.4mĆ2.2m |
In stock
| Number of Cathodes(max.) | 4 |
|---|---|
| Sputtering Power Supply | DC / RF / pulsed DC, freely switchable |
| Ion Source | RF & Kaufman & Hall ion source |
| Bias | RF / pulsed DC |
| Vacuum Sampling Chamber | optional |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Flow Control | Digital mass flow meter |
| Coating Uniformity | Ā±3% |
| Coating Repeatability | Ā±2% |
| Uniform Deposition Area(max.) | Ć150āÆmm |
| Vacuum Measurement | Full-range vacuum gauge + āCapacitance diaphragm gauge |
| Ultimate Vacuum | 1E-5Pa |
| Temperature Range | RT~300ā |
| Size(LĆWĆH) | 1.6mĆ2.75mĆ1.8m |
In stock
| Wafer Size | 6″, 8″ |
|---|---|
| Process | FOX/STI Anneal/Pad-Oxide/Gate Oxide/BPSG Reflow/Final Alloy/Cu Anneal/N2 Anneal/Polyimide Cure |
| Compatible Materials | SiC, GaN, Si |
| Teamperature Control Accuracy | ā¤Ā±1ā |
| Flat Zone Length | 860mm |
| Batch Size | 150/125 |
| SMIF/Open Cassette/OHT | Option |
| N2 Load Lock | Option |
| AGC | Option |
| Particle Control | ā¤20@0.16Ī¼m |
| Uniformity(WIW/WTW/LTL) | ā¤2%/1.5%/1.5% |
| Metal Contamination (ICP-MS/TXRF) | 5E10 |
| Loccalization Progress | Continuous improvement |
| Size(LĆWĆH) | 4420mmĆ900mmĆ3302mm, 4093mmĆ900mmĆ3302mm |
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