SA-VKM800 is a high-precision magnetron sputter system. It delivers superior coating uniformity and features low-maintenance design, fulfilling both mass-production and laboratory requirements for high-precision reactive magnetron sputtering and hole-filling processes.
SA-VKM800 is a high-precision magnetron sputter system. It delivers superior coating uniformity and features low-maintenance design, fulfilling both mass-production and laboratory requirements for high-precision reactive magnetron sputtering and hole-filling processes.
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Feature |
Application |
|---|---|
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Principle：
Features
| Uniform Deposition Area(max.) | 5×Ø300 mm |
|---|---|
| Ultimate Vacuum | 1E-5Pa |
General
| Number of Cathodes(max.) | 4 |
|---|---|
| Sputtering Power Supply | DC / RF / pulsed DC, freely switchable |
| Ion Source | RF & Kaufman & Hall ion source |
| Bias | RF / pulsed DC |
| Vacuum Sampling Chamber | Multi-wafer fully-automatic sampling chamber, optional |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Flow Control | Digital mass flow meter |
| Coating Uniformity | ±1.5% |
| Coating Repeatability | ±2% |
| Vacuum Measurement | Full-range vacuum gauge + Capacitance diaphragm gauge |
| Temperature Range | -50~800℃ |
| Size(L×W×H)or(D×W×H) | 3.2m×3.3m×2.2m |
In stock
| Number of Cathodes(max.) | 2 |
|---|---|
| Sputtering Power Supply | DC / RF / pulsed DC, freely switchable |
| Ion Source | Anode & Kaufman & RF ion source |
| Bias | RF / pulsed DC |
| Vacuum Sampling Chamber | Fully-automatic sampling chamber, optional |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Flow Control | Digital mass flow meter |
| Coating Uniformity | ±3% |
| Coating Repeatability | ±2% |
| Uniform Deposition Area(max.) | 1000 mm×1000 mm |
| Ultimate Vacuum | 3E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge + Capacitance diaphragm gauge |
| Temperature Range | RT~300℃ |
| Size(L×W×H)or(D×W×H) | 5m×2.8m×1.6m |
In stock
| Number of Crucibles(max.) | 8 |
|---|---|
| Power Supply(max.) | 10kW |
| Film thickness monitoring | Crystal oscillator controller |
| Ion Source | RF & Kaufman & Hall ion source |
| Fixture types | Dome & Knudsen & Planetary |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Coating Uniformity | ±2% |
| Coating Repeatability | ±2% |
| Uniform Deposition Area(max.) | Ø300 mm |
| Ultimate Vacuum | 2E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge |
| Temperature Range | RT~300℃ |
| Size(L×W×H)or(D×W×H) | 4.05m×3.9m×2.8m |
In stock
| Wafer Size | 6″, 8″ |
|---|---|
| Standard Configuration | SMIF×3+EFEM×1+LL×2+TM×1+PM×3 |
| Wafer Station | Twins chamber, 2 pcs/chamber, max 6pcs for 3 chambers |
| Automation | Open cassette/SMIF |
| Process | SiO2/SiNx/TEOS/BPSG |
| Deposit Materials | BPSG, SiNx, SiO2, SiON, TEOS SiO2 |
| Uniformity | WIW ≤3.0%、WTW≤3.0%、RTR≤3.0% |
| Gas Configuration | TEOS/TEPO/TEB/O2/SiH4/NH3/N2O/He/N2/NF3/Ar(RPS) |
| Cooling Module | EFFM cooling buffer |
| Foot print | 2100×3360(7.0m2) |
| WPH(relative) | 1.20 |
| CoC(relative) | 0.83 |
| CoO(relative) | 0.75 |
| Clean Mode | RPS clean,>2μm/min |
| Size(L×W×H)or(D×W×H) | 2100mm×3360mm×2600mm |
In stock
| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | PolySi, Si |
| Processes | Poly EB/STI/Poly gate/CT Si |
| Coil | Dual Zone |
| Match Mode | L-Match |
| Magnetic Shield | Yes |
| Gas Injector | Dual Zone |
| FRC | Yes |
| Liner | Symmetric Grid |
| Edge Ring | CIP version |
| ESC | Dual Zone |
| ESC Materials | Ceramic |
| Lift Pin | Ceramic |
| Turbo | 1600L/s |
| Chamber | Symmetric |
| Size(L×W×H)or(D×W×H) | 3279mm×3253mm×2339mm |
In stock
| Number of Cathodes(max.) | 2 |
|---|---|
| Sputtering Power Supply | DC / RF / pulsed DC, freely switchable |
| Ion Source | RF & Kaufman & Hall ion source |
| Bias | RF / pulsed DC |
| Vacuum Sampling Chamber | Single-wafer/multi-wafer fully-automatic sampling chamber, optional |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Flow Control | Digital mass flow meter |
| Coating Uniformity | ±2% |
| Coating Repeatability | ±2% |
| Uniform Deposition Area(max.) | Ø200 mm |
| Ultimate Vacuum | 1E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge + Capacitance diaphragm gauge |
| Temperature Range | -50~800℃ |
| Size(L×W×H)or(D×W×H) | 3.8m×2.8m×2.2m |
In stock
| Wafer Size | 6″, 8″ |
|---|---|
| Process | FOX/STI Anneal/Pad-Oxide/Gate Oxide/BPSG Reflow/Final Alloy/Cu Anneal/N2 Anneal/Polyimide Cure |
| Compatible Materials | GaN, Si, SiC |
| Teamperature Control Accuracy | ≤±1℃ |
| Flat Zone Length | 860mm |
| Batch Size | 150/125 |
| SMIF/Open Cassette/OHT | Option |
| N2 Load Lock | Option |
| AGC | Option |
| Particle Control | ≤20@0.16μm |
| Uniformity(WIW/WTW/LTL) | ≤2%/1.5%/1.5% |
| Metal Contamination (ICP-MS/TXRF) | 5E10 |
| Loccalization Progress | Continuous improvement |
| Size(L×W×H)or(D×W×H) | 4093mm×900mm×3302mm, 4420mm×900mm×3302mm |
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