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Lithography Systems realize high-resolution pattern transfer for wafers. Featuring precise alignment and stable exposure control, they form fine microstructures to support advanced semiconductor and optoelectronic manufacturing.
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Digital Projection Maskless Lithography System SA-UVD
In stock
SKU:
SA-UVD
| Wavelength | 385nm, 405nm |
|---|---|
| Direct-write Resolution | 500nm |
| Writing Speed | 10 mm2/min |
| Maximum Substrate Size | 8-inch |
| Substrate Thickness | 0.1 mm ~ 8 mm |
| Maximum Exposure Area | 200 mm × 200 mm |
| Grayscale Level | 256, 1024, 2048, 4096 |
| Auto-focusing Range | 70 μm |
| Objective Lens | 5×, 10×, 20×, 50× |
| Writing & Slicing Software | Supports multiple formats including JPG, TIFF, and GDS. |
| Scripted Writing Mode | Provides a scripted programming interface to support user-defined processing structures. |
| Online Drawing Processing Mode | Supports real-time online drawing; allows direct drawing of custom graphics on the live sample image. |
| Real-time Auto-focusing | Optical focusing |
| Electrical Conditions | 230VAC±5%, 50/60 Hz, 10 A |
| Environmental Conditions | Temperature: 21±1°C;Relative Humidity: 40%~60%, non-condensing |
| Compressed Air | 6~9 bar, tolerance±0.5 bar |
| Ambient Lighting | Yellow light |
| Cleanliness Level | Class 1000 cleanroom |
| Size(L×W×H)or(D×W×H) | 940mm×850mm×1470mm |
| Weight | 250kg |
Hot
Multi-Photon 3D Laser Direct-Write Lithography System SA-MPD series
In stock
SKU:
SA-MPD series
| Wavelength | 515nm, 780nm |
|---|---|
| Lateral Minimum Feature Size Limit | 40 nm |
| Lateral Minimum Pitch Limit | 150 nm |
| Lateral Minimum Feature Size | XY ≤ 80 nm(MPD-100、MPD-1000), XY ≤ 50 nm(MPD-2000) |
| Lateral Minimum Pitch / Resolution | XY ≤ 300 nm(MPD-100、MPD-1000), XY ≤ 200 nm(MPD-2000) |
| Stitching Accuracy | ≤ 200 nm |
| Optimal Surface Roughness | ≤ 5 nm |
| High-Precision Auto-Focusing | Accuracy ≤25nm, compatible with both transparent and opaque substrates including silicon, glass, and sapphire |
| Focusing System | Standard: Total magnification 66×, NA 1.42(Other magnifications and specifications available upon request) |
| Power Supply | Power cable: 6 mm2 cross-section 220V AC, 50 Hz, 16 A |
| Peak Power / Operating Power | 4 kW/1 kW(MPD-100), 8 kW/4 kW(MPD-1000、MPD-2000) |
| Recommended Usage Area | 2 m×2 m |
| Size(L×W×H)or(D×W×H) | 1300mm×1300mm×2200mm, 940mm×785mm×720mm |
| Cabinet Dimensions(mm, W×D×H) | 620×800×160 |
| Weight | <1200kg, <600kg |
| Intelligent Strategies | 1.Contour/Shell Filling; 2.Arbitrary/Custom Sequence Mode; 3.Adaptive Slicing; 4.Vector Mode |
| Fixture/Substrate | 1.Including but not limited to metal, glass (quartz), sapphire, silicon wafers; 2.Compatible with multiple substrate fixturing methods: vacuum chucking, mechanical clamping, magnetic chucking; 3.Standard/Custom optical fiber fixtures |
| More Functions | Anchor points, Measurement, Fiducial marking, Tilt compensation, Rotation, etc. |
| Photoresist/Materials | 1.Self-developed two-photon photoresists, HBP, PPI-Dip, HBO-2, etc.; 2.Compatible with third-party two-photon photoresists and other photocurable materials, including but not limited to AZ series, SU-8 series; 3.Supports printing of biocompatible hydrogel materials; 4.Supports precursor photoresists for glass, PDMS and other functional materials |
| Average power | ≥ 1W |
| Pulse duration | ≤ 200 fs |
| Stage XYZ travel | 100 mm×100 mm×25 mm |
| High-precision Z-axis | Travel ≥75 μm; minimum step size ≤ 10 nm |
| Environmental Conditions | Yellow safelight; ISO Class 7(10,000) or better cleanroom; vibration isolation exceeding VC-C; Laboratory ambient tem- perature recommended at 21-23°C |
| Compressed Air | Not necessary, only for active vibration isolation and vacuum stage fixtures |
Hot
Ultraviolet Laser Direct-Write Lithography System SA-AOD-M1000
In stock
SKU:
SA-AOD-M1000
| Wavelength | 375nm, 405nm |
|---|---|
| Minimum Feature Size | 300nm |
| Overlay Accuracy | 300nm |
| Focusing Range | 100 μm |
| Long-term Power stability | ±1% |
| Maximum Supported Substrate Size | 8-inch standard wafer, 200 mm × 200 mm planar substrate |
| Supported Substrate Thickness | 0.1 mm ~ 15 mm |
| Maximum Exposure Area | 200 mm × 200 mm |
| Temperature Control Stability | ±0.1°C (core optical cavity constant temperature control) |
| Exposure Grayscale Level | 4096 levels, wi th high-precision exposure dose closed-loop control |
| UV Special Objective Lens | Optional magnification: 5×, 10×, 20×, 50×, 100×; flat-field apochromatic design for UV band; core numerical aperture (NA) fully matches the resolution requirements of each magnification. |
| Pattern Writing Layout Data Preprocessing Software | Supports industry-standard vector layout formats including GDSII and OASIS; provides compatible conversion and preprocessing for bitmap formats (JPG, TIFF, BMP) for auxiliary pattern design; built-in stitching, exposure dose compensation, and Optical Proximity Correction. |
| Electrical Conditions | 230VAC±5%, 50/60 Hz, 16 A,single-phase |
| Environmental Conditions | Temperature: 21±1°C; Relative Humidity: 40%~60%, non-condensing |
| Compressed Air | 6~9 bar, pressure fluctuation ≤ ±0.5 bar; oil-free, water-free, Class 0 clean compressed air; dew point ≤ -20°C |
| Ambient Lighting | Yellow light environment (wavelength > 500 nm), no UV light leakage |
| Cleanroom Requirement | ISO Class 6 (Class 1000) cleanroom |
| Size(L×W×H)or(D×W×H) | 1320mm×1320mm×2000mm |
| Weight | 1100kg |