Digital Projection Maskless Lithography System SA-UVD
Digital Projection Maskless Lithography System SA-UVD
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Multi-Photon 3D Laser Direct-Write Lithography System SA-MPD series
Multi-Photon 3D Laser Direct-Write Lithography System SA-MPD series
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Ultraviolet Laser Direct-Write Lithography System SA-AOD-M1000 - Image 1
Ultraviolet Laser Direct-Write Lithography System SA-AOD-M1000 - Image 2
Ultraviolet Laser Direct-Write Lithography System SA-AOD-M1000
Ultraviolet Laser Direct-Write Lithography System SA-AOD-M1000 - Image 2

Ultraviolet Laser Direct-Write Lithography System SA-AOD-M1000

SKU: SA-AOD-M1000

    The SA-AOD UV Laser Direct-Writing System is a maskless lithography tool for micro-nano structuring. It uses an acousto-optic deflector (AOD) for inertia-free high-speed UV laser scanning. Without photomasks, it directly exposes high-precision micro-patterns on photoresist-coated substrates including optical glass, silicon wafers and other semiconductor & optical planar materials.Ideal for R&D and mass production of DOE, MEMS and other micro-nano devices, it delivers reliable process solutions for micro-nano optics, semiconductors and microelectronics.

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Description

Datasheet

    The SA-AOD UV Laser Direct-Writing System is a maskless lithography tool for micro-nano structuring. It uses an acousto-optic deflector (AOD) for inertia-free high-speed UV laser scanning. Without photomasks, it directly exposes high-precision micro-patterns on photoresist-coated substrates including optical glass, silicon wafers and other semiconductor & optical planar materials.Ideal for R&D and mass production of DOE, MEMS and other micro-nano devices, it delivers reliable process solutions for micro-nano optics, semiconductors and microelectronics.

Feature

Application
    • Mask-less patterning
    • Grayscale exposure
    • High-speed scanning
    • Full-field auto-focusing
    • DOE
    • Photonic chips
    • Semiconductors
    • MEMS
Processing Cases：

Specification

Features

Wavelength

General

Minimum Feature Size300nm
Overlay Accuracy300nm
Focusing Range100 μm
Long-term Power stability±1%
Maximum Supported Substrate Size8-inch standard wafer, 200 mm × 200 mm planar substrate
Supported Substrate Thickness0.1 mm ~ 15 mm
Maximum Exposure Area200 mm × 200 mm
Temperature Control Stability±0.1°C (core optical cavity constant temperature control)
Exposure Grayscale Level4096 levels, wi th high-precision exposure dose closed-loop control
UV Special Objective LensOptional magnification: 5×, 10×, 20×, 50×, 100×; flat-field apochromatic design for UV band; core numerical aperture (NA) fully matches the resolution requirements of each magnification.
Pattern Writing Layout Data Preprocessing SoftwareSupports industry-standard vector layout formats including GDSII and OASIS; provides compatible conversion and preprocessing for bitmap formats (JPG, TIFF, BMP) for auxiliary pattern design; built-in stitching, exposure dose compensation, and Optical Proximity Correction.
Electrical Conditions230VAC±5%, 50/60 Hz, 16 A,single-phase
Environmental ConditionsTemperature: 21±1°C; Relative Humidity: 40%~60%, non-condensing
Compressed Air6~9 bar, pressure fluctuation ≤ ±0.5 bar; oil-free, water-free, Class 0 clean compressed air; dew point ≤ -20°C
Ambient LightingYellow light environment (wavelength > 500 nm), no UV light leakage
Cleanroom RequirementISO Class 6 (Class 1000) cleanroom
Size(L×W×H)or(D×W×H)1320mm×1320mm×2000mm
Weight1100kg

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