Ā Ā Ā Ā Ā Ā SA-VKE800D is a multi-purpose electron beam evaporation platform built for universal application. It combines outstanding performance, consistent stable running, full automatic control and low maintenance costs, fully accommodating varied e-beam evaporation workflows in industrial manufacturing and academic R&D.Ā
SA-VKE800D is a multi-purpose electron beam evaporation platform built for universal application. It combines outstanding performance, consistent stable running, full automatic control and low maintenance costs, fully accommodating varied e-beam evaporation workflows in industrial manufacturing and academic R&D.
|
Feature |
Application |
|---|---|
|
|
Principleļ¼
Features
| Number of Crucibles(max.) | 6 |
|---|---|
| Uniform Deposition Area(max.) | Ć300āÆmm |
| Ultimate Vacuum | 1E-5Pa |
General
| Automatic Loadlocks | Single &multi-chip automatic laodlock |
|---|---|
| Workpiece Angle | -45Ā°~45Ā°ļ¼adjustable |
| Power Supply(max.) | 10kW |
| Film thickness monitoring | Crystal oscillator controller |
| Ion Source | Kaufman & Hall ion source |
| Fixture types | Dome & Planetary |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Coating Uniformity | Ā±2% |
| Coating Repeatability | Ā±2% |
| Vacuum Measurement | Full-range vacuum gauge |
| Temperature Range | RT~500ā |
| Size(LĆWĆH) | 4.0mĆ3.1mĆ2.9m |
In stock
| Wafer Size | 8″, 6″ |
|---|---|
| Etching Materials | Dielectric SiO2, Dielectric SiNx, Dielectric SiON |
| Processes | FEOL/BEOL(HM/CT/Spacer/Via/PAD) |
| SHD | Si(SDH), Al-Y2O3 coating(SDL) |
| Gas Injection | Dual zone inject(10-90% adj) |
| Temp Control | Chiller |
| Cathode | Dual zone ESC |
| Process Mode | Clean Mode(SDL) |
| Etch Rate(ER) | > 4500 A/min(SDH), >6000 A/min(SDL) |
| Sidewall Roughness | < 1 nm(SDH) |
| U% | WIW < 3% @ EE3mm, WTW < 3% |
| WPH | ~ 10 @15K(SDH), 12 @10K(SDL) |
| COC | 1 |
| MTTR | <1h(SDH) |
| MTBC | > 200 RFh(SDH), > 150 RFh(SDL) |
| Size(LĆWĆH) | 3279mmĆ3253mmĆ2339mm |
In stock
| Number of Crucibles(max.) | 8 |
|---|---|
| Power Supply(max.) | 10kW |
| Film thickness monitoring | Crystal oscillator controller |
| Ion Source | RF & Kaufman & Hall ion source |
| Fixture types | Dome & Knudsen & Planetary |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Coating Uniformity | Ā±2% |
| Coating Repeatability | Ā±2% |
| Uniform Deposition Area(max.) | 12ĆĆ200āÆmm |
| Ultimate Vacuum | 2E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge |
| Temperature Range | RT~200ā |
| Size(LĆWĆH) | 8.5mĆ5.5mĆ3.3m |
In stock
| Number of Crucibles(max.) | 6 |
|---|---|
| Power Supply(max.) | 10kW |
| Automatic Loadlocks | Single &multi-chip automatic laodlock |
| Workpiece Angle | -45Ā°~45Ā°ļ¼adjustable |
| Film thickness monitoring | Crystal oscillator controller |
| Ion Source | Hall ion source |
| Fixture types | Dome & Plate |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Coating Uniformity | Ā±3% |
| Coating Repeatability | Ā±2% |
| Uniform Deposition Area(max.) | Ć200āÆmm |
| Ultimate Vacuum | 1E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge |
| Temperature Range | -50~300ā |
| Size(LĆWĆH) | 3.15mĆ2.4mĆ2.2m |
In stock
| Number of Process Chambers(max.) | 5 |
|---|---|
| Process Chamber Type | Sputter & Degas & Pre-clean & Evaporation |
| Number of Sample Chambers(max.) | 2 |
| Autosampling Chamber | Integrated with BROOKS system |
| Ion Source | optional |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Flow Control | Digital mass flow meter |
| Coating Uniformity | Ā±2% |
| Coating Repeatability | Ā±2% |
| Uniform Deposition Area(max.) | Ć200āÆmm |
| Ultimate Vacuum | 1E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge + āCapacitance diaphragm gauge |
| Temperature Range | -80~500ā |
| Size(LĆWĆH) | 3.73mĆ2.75mĆ2.2m |
In stock
| Wafer Size | 8″, 6″ |
|---|---|
| Etching Materials | Si, PolySi |
| Processes | Poly EB/STI/Poly gate/CT Si |
| Coil | Dual Zone |
| Match Mode | L-Match |
| Magnetic Shield | Yes |
| Gas Injector | Dual Zone |
| FRC | Yes |
| Liner | Symmetric Grid |
| Edge Ring | CIP version |
| ESC | Dual Zone |
| ESC Materials | Ceramic |
| Lift Pin | Ceramic |
| Turbo | 1600L/s |
| Chamber | Symmetric |
| Size(LĆWĆH) | 3279mmĆ3253mmĆ2339mm |
In stock
| Wafer Size | 6″, 8″ |
|---|---|
| Process | FOX/STI Anneal/Pad-Oxide/Gate Oxide/BPSG Reflow/Final Alloy/Cu Anneal/N2 Anneal/Polyimide Cure |
| Compatible Materials | SiC, GaN, Si |
| Teamperature Control Accuracy | ā¤Ā±1ā |
| Flat Zone Length | 860mm |
| Batch Size | 150/125 |
| SMIF/Open Cassette/OHT | Option |
| N2 Load Lock | Option |
| AGC | Option |
| Particle Control | ā¤20@0.16Ī¼m |
| Uniformity(WIW/WTW/LTL) | ā¤2%/1.5%/1.5% |
| Metal Contamination (ICP-MS/TXRF) | 5E10 |
| Loccalization Progress | Continuous improvement |
| Size(LĆWĆH) | 4420mmĆ900mmĆ3302mm, 4093mmĆ900mmĆ3302mm |
Reviews
Clear filtersThere are no reviews yet.