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Fully automated, high-performance PECVD equipment SA-EPEE i200
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SKU:
SA-EPEE i200
| Wafer Size | 6″, 8″ |
|---|---|
| Standard Configuration | SMIF×3+EFEM×1+LL×2+TM×1+PM×3 |
| Wafer Station | Twins chamber, 2 pcs/chamber, max 6pcs for 3 chambers |
| Automation | Open cassette/SMIF |
| Process | SiO2/SiNx/TEOS/BPSG |
| Deposit Materials | BPSG, SiNx, SiO2, SiON, TEOS SiO2 |
| Uniformity | WIW ≤3.0%、WTW≤3.0%、RTR≤3.0% |
| Gas Configuration | TEOS/TEPO/TEB/O2/SiH4/NH3/N2O/He/N2/NF3/Ar(RPS) |
| Cooling Module | EFFM cooling buffer |
| Foot print | 2100×3360(7.0m2) |
| WPH(relative) | 1.20 |
| CoC(relative) | 0.83 |
| CoO(relative) | 0.75 |
| Clean Mode | RPS clean,>2μm/min |
| Size(L×W×H) | 2100mm×3360mm×2600mm |