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Dielectric Etcher SA-NMC508SDH/SDL

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SKU: SA-NMC508SDH/SDL
Wafer Size6″, 8″
Etching MaterialsDielectric SiO2, Dielectric SiNx, Dielectric SiON
ProcessesFEOL/BEOL(HM/CT/Spacer/Via/PAD)
SHDSi(SDH), Al-Y2O3 coating(SDL)
Gas InjectionDual zone inject(10-90% adj)
Temp ControlChiller
CathodeDual zone ESC
Process ModeClean Mode(SDL)
Etch Rate(ER)> 4500 A/min(SDH), >6000 A/min(SDL)
Sidewall Roughness< 1 nm(SDH)
U%WIW < 3% @ EE3mm, WTW < 3%
WPH~ 10 @15K(SDH), 12 @10K(SDL)
COC1
MTTR<1h(SDH)
MTBC> 200 RFh(SDH), > 150 RFh(SDL)
Size(LƗWƗH)3279mmƗ3253mmƗ2339mm

Poly-Si Etcher SA-NMC508SES

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SKU: SA-NMC508SES
Wafer Size6″, 8″
Etching MaterialsSi, PolySi
ProcessesPoly EB/STI/Poly gate/CT Si
CoilDual Zone
Match ModeL-Match
Magnetic ShieldYes
Gas InjectorDual Zone
FRCYes
LinerSymmetric Grid
Edge RingCIP version
ESCDual Zone
ESC MaterialsCeramic
Lift PinCeramic
Turbo1600L/s
ChamberSymmetric
Size(LƗWƗH)3279mmƗ3253mmƗ2339mm

SiC Etcher SA-GDE C200

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SKU: SA-GDE C200
Wafer Size6″, 8″
Etching MaterialsSiC, SiO2, SiN, Polymer, AlScN
ProcessesSiC trench/SiC Via/SiC Mark
Source-RFDual coil,13.56MHz
Source Range3000W+3000W
Bias-RF13.56MHz
Top WindowChiller heating
ESCDual electrode
Turbo2650L/s
Gas InjectorSymmetric 8 injectors
Surface TreatementY2O3 Coating
Maintain Time3h
SiC Etch Rate6000A/min
PA> 0.2μm < 30ea
MTBC200RFH
Metal ContaminationFree
Size(LƗWƗH)3279mmƗ3253mmƗ2339mm