General PVD System SA-Polaris BM620

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SKU: SA-Polaris BM620

Ā Ā Ā Ā Ā Ā SA-Polaris BM620 is an automated 6/8-inch backside metallization PVD platform optimized for SiC power semiconductors. It deposits Ti, Ni, NiV and Ag for wafer rear-side metallization, precisely controlling film thickness and sheet resistance with uniformity less than 3%. Featuring compact cluster layout and robust warpage control, it achieves reliable mass production for power device back-metal processes with low particle contamination.Ā 

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Description

SA-Polaris BM620 is an automated 6/8-inch backside metallization PVD platform optimized for SiC power semiconductors. It deposits Ti, Ni, NiV and Ag for wafer rear-side metallization, precisely controlling film thickness and sheet resistance with uniformity less than 3%. Featuring compact cluster layout and robust warpage control, it achieves reliable mass production for power device back-metal processes with low particle contamination.

Feature

Application

  • Strict sheet resistance
  • More stable
  • Mass production
  • Excellent warpage control capability
  • Si/SiC Power
  • Ohmic Contact
  • Barrier Layer
  • Planarization

Principle:

3200Ɨ2700Ɨ2200 mm

3100Ɨ4400Ɨ2200 mm

Specification

Features

Wafer Size6″, 8″

General

THK mean(A)1500±75(Ni), 2000±100(Ti), 10K±500(Ag)
Rs Mean(Ī©/ā–”)0.6±0.1(Ni), 2.9±0.3(Ti), 0.021±0.005(Ag)
Rs U%(WIW,%,16)< 3@EE3
Infilm Particle< 30ea@0.3μm
Size(LƗWƗH)2700mmƗ3200mmƗ2200mm, 4400mmƗ3100mmƗ2200mm

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