Showing 25–33 of 33 results
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Multi-Photon 3D Laser Direct-Write Lithography System SA-MPD series
In stock
SKU:
SA-MPD series
| Wavelength | 515nm, 780nm |
|---|---|
| Lateral Minimum Feature Size Limit | 40 nm |
| Lateral Minimum Pitch Limit | 150 nm |
| Lateral Minimum Feature Size | XY ≤ 80 nm(MPD-100、MPD-1000), XY ≤ 50 nm(MPD-2000) |
| Lateral Minimum Pitch / Resolution | XY ≤ 300 nm(MPD-100、MPD-1000), XY ≤ 200 nm(MPD-2000) |
| Stitching Accuracy | ≤ 200 nm |
| Optimal Surface Roughness | ≤ 5 nm |
| High-Precision Auto-Focusing | Accuracy ≤25nm, compatible with both transparent and opaque substrates including silicon, glass, and sapphire |
| Focusing System | Standard: Total magnification 66×, NA 1.42(Other magnifications and specifications available upon request) |
| Power Supply | Power cable: 6 mm2 cross-section 220V AC, 50 Hz, 16 A |
| Peak Power / Operating Power | 4 kW/1 kW(MPD-100), 8 kW/4 kW(MPD-1000、MPD-2000) |
| Recommended Usage Area | 2 m×2 m |
| Size(L×W×H)or(D×W×H) | 1300mm×1300mm×2200mm, 940mm×785mm×720mm |
| Cabinet Dimensions(mm, W×D×H) | 620×800×160 |
| Weight | <1200kg, <600kg |
| Intelligent Strategies | 1.Contour/Shell Filling; 2.Arbitrary/Custom Sequence Mode; 3.Adaptive Slicing; 4.Vector Mode |
| Fixture/Substrate | 1.Including but not limited to metal, glass (quartz), sapphire, silicon wafers; 2.Compatible with multiple substrate fixturing methods: vacuum chucking, mechanical clamping, magnetic chucking; 3.Standard/Custom optical fiber fixtures |
| More Functions | Anchor points, Measurement, Fiducial marking, Tilt compensation, Rotation, etc. |
| Photoresist/Materials | 1.Self-developed two-photon photoresists, HBP, PPI-Dip, HBO-2, etc.; 2.Compatible with third-party two-photon photoresists and other photocurable materials, including but not limited to AZ series, SU-8 series; 3.Supports printing of biocompatible hydrogel materials; 4.Supports precursor photoresists for glass, PDMS and other functional materials |
| Average power | ≥ 1W |
| Pulse duration | ≤ 200 fs |
| Stage XYZ travel | 100 mm×100 mm×25 mm |
| High-precision Z-axis | Travel ≥75 μm; minimum step size ≤ 10 nm |
| Environmental Conditions | Yellow safelight; ISO Class 7(10,000) or better cleanroom; vibration isolation exceeding VC-C; Laboratory ambient tem- perature recommended at 21-23°C |
| Compressed Air | Not necessary, only for active vibration isolation and vacuum stage fixtures |
Poly-Si Etcher SA-NMC508SES
In stock
SKU:
SA-NMC508SES
| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | PolySi, Si |
| Processes | Poly EB/STI/Poly gate/CT Si |
| Coil | Dual Zone |
| Match Mode | L-Match |
| Magnetic Shield | Yes |
| Gas Injector | Dual Zone |
| FRC | Yes |
| Liner | Symmetric Grid |
| Edge Ring | CIP version |
| ESC | Dual Zone |
| ESC Materials | Ceramic |
| Lift Pin | Ceramic |
| Turbo | 1600L/s |
| Chamber | Symmetric |
| Size(L×W×H)or(D×W×H) | 3279mm×3253mm×2339mm |
Reactive Magnetron Sputter System SA-VKV500
In stock
SKU:
SA-VKV500
| Number of Cathodes(max.) | 2 |
|---|---|
| Sputtering Power Supply | DC / RF / pulsed DC, freely switchable |
| Ion Source | RF & Kaufman & Hall ion source |
| Bias | RF / pulsed DC |
| Vacuum Sampling Chamber | Single-wafer/multi-wafer fully-automatic sampling chamber, optional |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Flow Control | Digital mass flow meter |
| Coating Uniformity | ±2% |
| Coating Repeatability | ±2% |
| Uniform Deposition Area(max.) | Ø200 mm |
| Ultimate Vacuum | 1E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge + Capacitance diaphragm gauge |
| Temperature Range | -50~800℃ |
| Size(L×W×H)or(D×W×H) | 3.8m×2.8m×2.2m |
Resistance Evaporation System SA-VKT360
In stock
SKU:
SA-VKT360
| Power Supply(max.) | 8kW |
|---|---|
| Automatic Loadlocks | Single &multi-chip automatic laodlock |
| Workpiece Angle | -45°~45°，adjustable |
| Film thickness monitoring | Crystal oscillator controller |
| Ion Source | Hall ion source |
| Fixture types | Dome & Knudsen & Plate |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Coating Uniformity | ±3% |
| Coating Repeatability | ±2% |
| Uniform Deposition Area(max.) | Ø200 mm |
| Ultimate Vacuum | 1E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge |
| Temperature Range | -50~500℃ |
| Size(L×W×H)or(D×W×H) | 3.15m×2.4m×2.2m |
SiC Etcher SA-GDE C200
In stock
SKU:
SA-GDE C200
| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | AlScN, Polymer, SiC, SiN, SiO2 |
| Processes | SiC trench/SiC Via/SiC Mark |
| Source-RF | Dual coil,13.56MHz |
| Source Range | 3000W+3000W |
| Bias-RF | 13.56MHz |
| Top Window | Chiller heating |
| ESC | Dual electrode |
| Turbo | 2650L/s |
| Gas Injector | Symmetric 8 injectors |
| Surface Treatement | Y2O3 Coating |
| Maintain Time | 3h |
| SiC Etch Rate | 6000A/min |
| PA | > 0.2μm < 30ea |
| MTBC | 200RFH |
| Metal Contamination | Free |
| Size(L×W×H)or(D×W×H) | 3279mm×3253mm×2339mm |
SiC Etcher SA-GDE C200L
In stock
SKU:
SA-GDE C200L
| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | AlScN, Polymer, SiC, SiN, SiO2 |
| Processes | SiC trench/SiC Via/Sic Mark |
| SRF Frequency | 2MHz |
| SRF Power | 2500W |
| SRF Coil | ICP Cubic |
| BRF Frequency | 13.56MHz |
| BRF Power | 1500W |
| Wall | RT~80℃(Adjustable) |
| Upper Electrode | RT~120℃(Adjustable) |
| Bottom Electrode | Clamp chuck:-20~300℃(Max400℃),E chuck:-20~90℃ |
| Wafer Clampage | ESC/Mechanical damp |
| Turbo Pump | BOC,2650L/s |
| Injection | TOP,Center |
| MFC | 8 gas/12 gas |
| EPD | OES/LEP&CCD |
| Surface Treatment | Roughness coating |
| Open Method | Electrical |
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Tomographic Volumetric Bioprinting System SA-VOP
In stock
SKU:
SA-VOP
| Wavelength | 405nm |
|---|---|
| Maximum Processing Size | ø40 mm×120 mm |
| Feature Accuracy | 200 μm |
| Processing Speed | 15 s~5 min/piece |
| Projection Resolution | 4K (3840×2160) |
| Projection Accuracy | 35 µm |
| Working Distance | 188 mm~221 mm |
| Optical Power Density | 64.4 mW/cm2 |
| Maximum Rotation Speed | 200 r/min |
| Minimum Step Angle | 0.02° |
| Angular Transmission Accuracy | 2 arcmin (0.033°) |
| Repeat Positioning Accuracy | ±15 arcsec (0.004°) |
| Allowable Axial Load | 4000 N |
| XYZ Triaxial Stroke | 350 mm×350 mm×100 mm |
| XYZ Triaxial Positioning Accuracy | 0.1 mm |
| Resolution | 2448×2048 |
| Pixel Size | 3.45 µm |
| Maximum Frame Rate | 60.0 fps |
| Processing Structure Type | Arbitrary 3D and 2.5D structures |
| Applicable Consumables | 405 nm-responsive photocurable materials (hydrogel, GelMA, engineering resin, photocurable glass, etc.) |
| Other Functions | Refractive index matching, automatic rotation axis alignment, real-time printing monitoring, automatic material assembly, etc. |
| Size(L×W×H)or(D×W×H) | 600mm×800mm×600mm |
Hot
Ultraviolet Laser Direct-Write Lithography System SA-AOD-M1000
In stock
SKU:
SA-AOD-M1000
| Wavelength | 375nm, 405nm |
|---|---|
| Minimum Feature Size | 300nm |
| Overlay Accuracy | 300nm |
| Focusing Range | 100 μm |
| Long-term Power stability | ±1% |
| Maximum Supported Substrate Size | 8-inch standard wafer, 200 mm × 200 mm planar substrate |
| Supported Substrate Thickness | 0.1 mm ~ 15 mm |
| Maximum Exposure Area | 200 mm × 200 mm |
| Temperature Control Stability | ±0.1°C (core optical cavity constant temperature control) |
| Exposure Grayscale Level | 4096 levels, wi th high-precision exposure dose closed-loop control |
| UV Special Objective Lens | Optional magnification: 5×, 10×, 20×, 50×, 100×; flat-field apochromatic design for UV band; core numerical aperture (NA) fully matches the resolution requirements of each magnification. |
| Pattern Writing Layout Data Preprocessing Software | Supports industry-standard vector layout formats including GDSII and OASIS; provides compatible conversion and preprocessing for bitmap formats (JPG, TIFF, BMP) for auxiliary pattern design; built-in stitching, exposure dose compensation, and Optical Proximity Correction. |
| Electrical Conditions | 230VAC±5%, 50/60 Hz, 16 A,single-phase |
| Environmental Conditions | Temperature: 21±1°C; Relative Humidity: 40%~60%, non-condensing |
| Compressed Air | 6~9 bar, pressure fluctuation ≤ ±0.5 bar; oil-free, water-free, Class 0 clean compressed air; dew point ≤ -20°C |
| Ambient Lighting | Yellow light environment (wavelength > 500 nm), no UV light leakage |
| Cleanroom Requirement | ISO Class 6 (Class 1000) cleanroom |
| Size(L×W×H)or(D×W×H) | 1320mm×1320mm×2000mm |
| Weight | 1100kg |
Vertical Furnace SA-Flouris X201H/P
In stock
SKU:
SA-Flouris X201H/P
| Wafer Size | 6″, 8″ |
|---|---|
| Process | FOX/STI Anneal/Pad-Oxide/Gate Oxide/BPSG Reflow/Final Alloy/Cu Anneal/N2 Anneal/Polyimide Cure |
| Compatible Materials | GaN, Si, SiC |
| Teamperature Control Accuracy | ≤±1℃ |
| Flat Zone Length | 860mm |
| Batch Size | 150/125 |
| SMIF/Open Cassette/OHT | Option |
| N2 Load Lock | Option |
| AGC | Option |
| Particle Control | ≤20@0.16μm |
| Uniformity(WIW/WTW/LTL) | ≤2%/1.5%/1.5% |
| Metal Contamination (ICP-MS/TXRF) | 5E10 |
| Loccalization Progress | Continuous improvement |
| Size(L×W×H)or(D×W×H) | 4093mm×900mm×3302mm, 4420mm×900mm×3302mm |