Showing 25–28 of 28 results
Resistance Evaporation System SA-VKT360
In stock
Call for Price
SKU:
SA-VKT360
| Power Supply(max.) | 8kW |
|---|---|
| Automatic Loadlocks | Single &multi-chip automatic laodlock |
| Workpiece Angle | -45Ā°~45Ā°ļ¼adjustable |
| Film thickness monitoring | Crystal oscillator controller |
| Ion Source | Hall ion source |
| Fixture types | Dome & Knudsen & Plate |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Coating Uniformity | Ā±3% |
| Coating Repeatability | Ā±2% |
| Uniform Deposition Area(max.) | Ć200āÆmm |
| Ultimate Vacuum | 1E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge |
| Temperature Range | -50~500ā |
| Size(LĆWĆH) | 3.15mĆ2.4mĆ2.2m |
SiC Etcher SA-GDE C200
In stock
Call for Price
SKU:
SA-GDE C200
| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | SiN, Polymer, AlScN, SiC, SiO2 |
| Processes | SiC trench/SiC Via/SiC Mark |
| Source-RF | Dual coil,13.56MHz |
| Source Range | 3000W+3000W |
| Bias-RF | 13.56MHz |
| Top Window | Chiller heating |
| ESC | Dual electrode |
| Turbo | 2650L/s |
| Gas Injector | Symmetric 8 injectors |
| Surface Treatement | Y2O3 Coating |
| Maintain Time | 3h |
| SiC Etch Rate | 6000A/min |
| PA | > 0.2Ī¼m < 30ea |
| MTBC | 200RFH |
| Metal Contamination | Free |
| Size(LĆWĆH) | 3279mmĆ3253mmĆ2339mm |
SiC Etcher SA-GDE C200L
In stock
Call for Price
SKU:
SA-GDE C200L
| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | SiO2, SiN, Polymer, AlScN, SiC |
| Processes | SiC trench/SiC Via/Sic Mark |
| SRF Frequency | 2MHz |
| SRF Power | 2500W |
| SRF Coil | ICP Cubic |
| BRF Frequency | 13.56MHz |
| BRF Power | 1500W |
| Wall | RT~80ā(Adjustable) |
| Upper Electrode | RT~120ā(Adjustable) |
| Bottom Electrode | Clamp chuck:-20~300ā(Max400ā),E chuck:-20~90ā |
| Wafer Clampage | ESC/Mechanical damp |
| Turbo Pump | BOC,2650L/s |
| Injection | TOP,Center |
| MFC | 8 gas/12 gas |
| EPD | OES/LEP&CCD |
| Surface Treatment | Roughness coating |
| Open Method | Electrical |
Vertical Furnace SA-Flouris X201H/P
In stock
Call for Price
SKU:
SA-Flouris X201H/P
| Wafer Size | 6″, 8″ |
|---|---|
| Process | FOX/STI Anneal/Pad-Oxide/Gate Oxide/BPSG Reflow/Final Alloy/Cu Anneal/N2 Anneal/Polyimide Cure |
| Compatible Materials | Si, SiC, GaN |
| Teamperature Control Accuracy | ā¤Ā±1ā |
| Flat Zone Length | 860mm |
| Batch Size | 150/125 |
| SMIF/Open Cassette/OHT | Option |
| N2 Load Lock | Option |
| AGC | Option |
| Particle Control | ā¤20@0.16Ī¼m |
| Uniformity(WIW/WTW/LTL) | ā¤2%/1.5%/1.5% |
| Metal Contamination (ICP-MS/TXRF) | 5E10 |
| Loccalization Progress | Continuous improvement |
| Size(LĆWĆH) | 4420mmĆ900mmĆ3302mm, 4093mmĆ900mmĆ3302mm |