SiC Etcher SA-GDE C200
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Dielectric Etcher SA-NMC508SDH/SDL
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SiC Etcher SA-GDE C200L
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SiC Etcher SA-GDE C200L

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SKU: SA-GDE C200L

      SA-GDE C200L is an upgraded high-density etcher for 6/8-inch wide-bandgap semiconductors including SiC, GaAs and InP. It supports dual clamping modes of ESC and mechanical clamp with wide temperature range from -20℃ to 300℃. Equipped with dual-frequency RF and multi-point gas injection, it features flexible process windows and reliable etching performance for diversified compound semiconductor mass production. 

Feature

  • Symmetric Chamber Design
  • High Conductance Pumping System
  • Better U%
  • PA Control
  • Convenient
 Application

  • BAW
  • SiC Power
  • VCSEL
  • MEMS
  • GaN/GaAs RF

Specifications：

Parameter

Descriptions

Wafer Size

6/8inch

Etching Materials

SiC/SiO2/SiN/Polymer/AlScN

Processes

SiC trench/SiC Via/Sic Mark

SRF Frequency

2MHz

SRF Power

2500W

SRF Coil

ICP Cubic

BRF Frequency

13.56MHz

BRF Power

1500W

Wall

RT~80℃(Adjustable)

Upper Electrode

RT℃~120℃(Adjustable)

Bottom Electrode

Clamp chuck:-20~300℃(Max400℃)

E chuck:-20~90℃

Wafer Clampage

ESC/Mechanical damp

Turbo Pump

BOC,2650L/s

Injection

TOP,Center

MFC

8 gas/12 gas

EPD

OES/LEP&CCD

Surface Treatment

Roughness coating

Open Method

Electrical

 

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Description

Datasheet

SA-GDE C200L is an upgraded high-density etcher for 6/8-inch wide-bandgap semiconductors including SiC, GaAs and InP. It supports dual clamping modes of ESC and mechanical clamp with wide temperature range from -20℃ to 300℃. Equipped with dual-frequency RF and multi-point gas injection, it features flexible process windows and reliable etching performance for diversified compound semiconductor mass production.

Feature

Application
  • Symmetric Chamber Design
  • High Conductance Pumping System
  • Better U%
  • PA Control
  • Convenient
  • BAW
  • SiC Power
  • VCSEL
  • MEMS
  • GaN/GaAs RF

Principle：

Specification

Features

Wafer Size6″, 8″
Etching MaterialsSiC, SiO2, SiN, Polymer, AlScN

General

ProcessesSiC trench/SiC Via/Sic Mark
SRF Frequency2MHz
SRF Power2500W
SRF CoilICP Cubic
BRF Frequency13.56MHz
BRF Power1500W
WallRT~80℃(Adjustable)
Upper ElectrodeRT~120℃(Adjustable)
Bottom ElectrodeClamp chuck:-20~300℃(Max400℃),E chuck:-20~90℃
Wafer ClampageESC/Mechanical damp
Turbo PumpBOC,2650L/s
InjectionTOP,Center
MFC8 gas/12 gas
EPDOES/LEP&CCD
Surface TreatmentRoughness coating
Open MethodElectrical

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