Showing all 5 results
Dielectric Etcher SA-NMC508SDH/SDL
SKU:
SA-NMC508SDH/SDL
In stock
Call for Price| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | Dielectric SiO2, Dielectric SiNx, Dielectric SiON |
| Processes | FEOL/BEOL(HM/CT/Spacer/Via/PAD) |
| SHD | Si(SDH), Al-Y2O3 coating(SDL) |
| Gas Injection | Dual zone inject(10-90% adj) |
| Temp Control | Chiller |
| Cathode | Dual zone ESC |
| Process Mode | Clean Mode(SDL) |
| Etch Rate(ER) | > 4500 A/min(SDH), >6000 A/min(SDL) |
| Sidewall Roughness | < 1 nm(SDH) |
| U% | WIW < 3% @ EE3mm, WTW < 3% |
| WPH | ~ 10 @15K(SDH), 12 @10K(SDL) |
| COC | 1 |
| MTTR | <1h(SDH) |
| MTBC | > 200 RFh(SDH), > 150 RFh(SDL) |
| Size(LĆWĆH) | 3279mmĆ3253mmĆ2339mm |
Metal Etcher SA-NMC508SEM
SKU:
SA-NMC508SEM
In stock
Call for Price| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | AlCu, AlSiCu, W, TiN, Ti, TiW |
| Processes | TM/IM/WEB |
| Coil | Dual Coil |
| Match Mode | Fully automatic matching |
| Upper frequency | 13.56MHz |
| Window Heating | Heater Heating |
| Chamber Heating | Chiller |
| Pump | 1600L/s |
| N2 Pressure Control | Y |
| Throughput | 6K/M |
| MTBC | 350RFh |
| Size(LĆWĆH) | 3250mmĆ2580mmĆ2397mm |
Poly-Si Etcher SA-NMC508SES
SKU:
SA-NMC508SES
In stock
Call for Price| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | Si, PolySi |
| Processes | Poly EB/STI/Poly gate/CT Si |
| Coil | Dual Zone |
| Match Mode | L-Match |
| Magnetic Shield | Yes |
| Gas Injector | Dual Zone |
| FRC | Yes |
| Liner | Symmetric Grid |
| Edge Ring | CIP version |
| ESC | Dual Zone |
| ESC Materials | Ceramic |
| Lift Pin | Ceramic |
| Turbo | 1600L/s |
| Chamber | Symmetric |
| Size(LĆWĆH) | 3279mmĆ3253mmĆ2339mm |
SiC Etcher SA-GDE C200
SKU:
SA-GDE C200
In stock
Call for Price| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | SiC, SiO2, SiN, Polymer, AlScN |
| Processes | SiC trench/SiC Via/SiC Mark |
| Source-RF | Dual coil,13.56MHz |
| Source Range | 3000W+3000W |
| Bias-RF | 13.56MHz |
| Top Window | Chiller heating |
| ESC | Dual electrode |
| Turbo | 2650L/s |
| Gas Injector | Symmetric 8 injectors |
| Surface Treatement | Y2O3 Coating |
| Maintain Time | 3h |
| SiC Etch Rate | 6000A/min |
| PA | > 0.2Ī¼m < 30ea |
| MTBC | 200RFH |
| Metal Contamination | Free |
| Size(LĆWĆH) | 3279mmĆ3253mmĆ2339mm |
SiC Etcher SA-GDE C200L
SKU:
SA-GDE C200L
In stock
Call for Price| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | SiC, SiO2, SiN, Polymer, AlScN |
| Processes | SiC trench/SiC Via/Sic Mark |
| SRF Frequency | 2MHz |
| SRF Power | 2500W |
| SRF Coil | ICP Cubic |
| BRF Frequency | 13.56MHz |
| BRF Power | 1500W |
| Wall | RT~80ā(Adjustable) |
| Upper Electrode | RT~120ā(Adjustable) |
| Bottom Electrode | Clamp chuck:-20~300ā(Max400ā),E chuck:-20~90ā |
| Wafer Clampage | ESC/Mechanical damp |
| Turbo Pump | BOC,2650L/s |
| Injection | TOP,Center |
| MFC | 8 gas/12 gas |
| EPD | OES/LEP&CCD |
| Surface Treatment | Roughness coating |
| Open Method | Electrical |