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Fully automated, high-performance PECVD equipment SA-EPEE i200

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SKU: SA-EPEE i200

SA-EPEE i200 is an automated 150/200mm PECVD equipment for Si, SiC and GaAs wafers. Adopting twin-chamber design with dual-frequency RF, it deposits SiO2, SiNx, TEOS and BPSG films with ≤3% cross-wafer uniformity. Integrated with EFEM cooling and RPS in-situ cleaning, it raises throughput by 20%, cuts footprint and reduces CoC & CoO, fully optimized for mass production of power semiconductors and logic chips.

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Description

Datasheet

SA-EPEE i200 is an automated 150/200mm PECVD equipment for Si, SiC and GaAs wafers. Adopting twin-chamber design with dual-frequency RF, it deposits SiO2, SiNx, TEOS and BPSG films with ≤3% cross-wafer uniformity. Integrated with EFEM cooling and RPS in-situ cleaning, it raises throughput by 20%, cuts footprint and reduces CoC & CoO, fully optimized for mass production of power semiconductors and logic chips.

Feature	Application
High Efficient Trasfer System Less footprint Lower CoO & CoC	Compound Semiconductor R&D High and New Technology Industry

Precess control ability with SiH4、TEOS process：

Parameter	SiH₄Base				TEOS Base
Parameter	SiH₄-SiO₂	SiNx	SiON	BPSG	TEOS-SiO₂	BPSG
Gas Line	10				7
Thickness(A)	200~20000	200~10000	200~2000	300~20000	300~20000	300~20000
DR(A/min)	1000~15000	1000~15000	1000~10000	1000~15000	1000~15000	1000~15000
U%,1sigma	1.5%、1.5%、1.5%
R.I	1.5±0.05	2.0±0.2	1.7±0.1	1.46±0.02	1.46±0.02	1.46±0.02
Stress(MPa)	-100,Tunable	±100	-100	±100	±100	±100
PA(>0.20μm)	<30
Chamber Temperature	70±5℃
Process Temperature	Max 550℃
B/P	-	-	-	2~6% wt%	-	2~6% wt%

Principle：

Tool and Facilities：

	No.	Module Name	Quantity
Tool	1	Process Module(SiH₄/TEOS/Carbon)	3
	2	Transfer Module(EFFM、Loadlock)	1
	3	SMIF(Pod)/Open cassette	3
Facility	4	Dry Pump(PM)	3
	5	Dry Pump(TM)	2
	6	Chiller	1
	7	RF Cabinet	1
	8	Power Supply Cabinet	1
	9	Transformer	1
	10	LDS(TEOS/TEPO/TEB)	3

Capacity Requirements：

Tool Name	1PM	2PM	3PM
Image
Application	- EFEM + Loadlock - 2 Pod - 1 module - 2 wafers	- EFEM + Loadlock - 2 Pod - 2 process modules - 4 wafers	- EFEM + Loadlock - 3 Pod - 3 process modules - 6 wafers
Footprint	2850×2100×2600mm=6.0m²	2850×2100×2600mm=6.0m²	3360×2100×2600mm=7.0m²

Tool Name

1PM

2PM

3PM

Image

Application

- EFEM + Loadlock

- 2 Pod

- 1 module

- 2 wafers

- EFEM + Loadlock

- 2 Pod

- 2 process modules

- 4 wafers

- EFEM + Loadlock

- 3 Pod

- 3 process modules

- 6 wafers

Footprint

2850×2100×2600mm=6.0m²

3360×2100×2600mm=7.0m²

Specification

Features

Wafer Size	6″, 8″
Substrate Type	Si, SiC, W, TiN, Ti, TiW
Deposit Materials	SiO2, SiNx, SiON, TEOS SiO2, BPSG

General

Standard Configuration	SMIF×3+EFEM×1+LL×2+TM×1+PM×3
Wafer Station	Twins chamber, 2 pcs/chamber, max 6pcs for 3 chambers
Automation	Open cassette/SMIF
Process	SiO2/SiNx/TEOS/BPSG
Uniformity	WIW ≤3.0%、WTW≤3.0%、RTR≤3.0%
Gas Configuration	TEOS/TEPO/TEB/O2/SiH4/NH3/N2O/He/N2/NF3/Ar(RPS)
Cooling Module	EFFM cooling buffer
Foot print	2100×3360(7.0m2)
WPH(relative)	1.20
CoC(relative)	0.83
CoO(relative)	0.75
Clean Mode	RPS clean,>2μm/min
Size(L×W×H)	2100mm×3360mm×2600mm

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Fully automated, high-performance PECVD equipment SA-EPEE i200

Description

Specification

Features

General

Customer Reviews

Reviews

Related Products

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Electron Beam Evaporation System SA-VKE360

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