The SA-CG12 Contact thickness measurement gauge uses a high-precision thickness measurement instrument and is equipped with a high-precision marble reference measuring table. It is an ideal solution for high-precision wafer thickness measurement, as shown in the figure below.
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Feature |
Application |
|---|---|
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Features
| Wafer Size | 6″, 8″ |
|---|
General
| Number of Workstation | 1 |
|---|---|
| Measurement Range | 0~12.7 mm |
| Measurement Accuracy | 1 μm |
| Measuring Force | ≤1.5 N |
| Marble Platform | Platform dimensions can be customized as required; surface flatness: Grade 00. |
| Power Requirements | 220VAC 10A |
In stock
| Bonding Accuracy | ±3 μm@3sigma |
|---|---|
| Bonding Area | X-axis: 305 mm, Y-axis: 457 mm, rotation range: 0~180° |
| Ultrasonic | 0~4 W precise control with stepped flexible energy output |
| Loop Control | Fully programmable |
| Cavity Depth | 12mm(max.) |
| Bonding Force | 0~220g |
| Capillary Length | 16mm/19mm |
| Bonding Wire Type | Gold wire(18~75μm), copper wire (18~75 μm), selected alloy wires |
| Bonding Speed | ≥5wires/s |
| Operating System | Windows |
| Weight | 1.2T |
| Input Voltage | 220V±10%@50~60Hz |
| Power | 2KW |
| Compressed Air Requirement | ≥0.35MPa |
| Size(L×W×H)or(D×W×H) | 1500mm×1000mm×1700mm |
In stock
| Wafer Size | 2″~12″ |
|---|---|
| Loading Method | Automatic |
| Loading Type | Cassette/FOUP |
| Testing Capacity | 25~50 pcs/run |
| Wafer-ID | OCR-based automatic Wafer-ID recognition with Wafer Map generation |
| Auxiliary Chuck | Enables automatic probe cleaning, RF calibration, FA calibration, PD power/polarization calibration |
| Single-Probe Marking | Yes |
| Self-Cleaning | Yes (for wafer, Chuck, probes, FA) |
| Real-Time Height Sensing | Yes |
| Chuck Height Calibration | Yes |
| Chuck Positioning Accuracy | ±2µm |
| Temperature Range | -40~125℃ |
In stock
| Bonding Wire Type | Au(15~75μm),Pt(18~25μm),Ag(18~50μm) |
|---|---|
| Cavity Depth | 12mm(max.) |
| Capillary Length | 16mm/19mm |
| Spool Diameter | 1/2inch(standard), 2inches(optional) |
| Bonding Force | 1~250g |
| Bond Power | Numerical control,1000x subdivision |
| Clamping Table | Maximum Temperature 200℃ |
| Bond Head Z Range | 18mm |
| Bond Head X-Y Range | X=15mm,Y=15mm |
| Lifting Table Z Range | 0~18mm |
| Weight | 47kg(GW.), 70kg(NW.) |
| Input Voltage | 220V±10%@50~60Hz |
| Power Consumption | ≤500W |
| Size(L×W×H)or(D×W×H) | 640mm×620mm×450mm |
In stock
| Bonding Wire Type | Au(15~75μm),Pt(18~25μm), Cu(18~50μm),Ag(18~50μm) |
|---|---|
| Cavity Depth | 15mm(max.) |
| Capillary Length | 16mm/19mm |
| Spool Diameter | 1/2inch(standard), 2inches(optional) |
| Bonding Force | 1~250g |
| Bond Power | Numerical control,1000x subdivision |
| Clamping Table | Maximum Temperature 200℃ |
| Bond Head Z Range | 18mm |
| Bond Head X-Y Range | X=15mm,Y=15mm |
| Lifting Table Z Range | 0~18mm |
| Weight | 47kg(GW.), 70kg(NW.) |
| Input Voltage | 220V±10%@50~60Hz |
| Power Consumption | ≤500W |
| Size(L×W×H)or(D×W×H) | 640mm×620mm×450mm |
In stock
| Bonding Wire Type | Al(18~100μm),Au(15~75μm), Gold Ribbon(12.7 × 50μm~25.4 × 300μm),specific alloy wire |
|---|---|
| Cavity Depth | 21mm(max.) |
| Capillary Length | 19mm/25mm |
| Spool Diameter | 1/2inch(standard), 2inches(optional) |
| Bonding Force | 1~250g |
| Bond Power | Numerical control,1000x subdivision |
| Clamping Table | Maximum Temperature 200℃ |
| Bond Head Z Range | 18mm |
| Bond Head X-Y Range | X=15mm,Y=15mm |
| Lifting Table Z Range | 0~18mm |
| Weight | 47kg(GW.), 70kg(NW.) |
| Input Voltage | 220V±10%@50~60Hz |
| Power Consumption | ≤500W |
| Size(L×W×H)or(D×W×H) | 640mm×620mm×450mm |
In stock
| Wafer Size | 150mm, 200mm, 300mm |
|---|---|
| Functions | Timing, pressurization, heating(included), vacuum(included), cooling(included) |
| Bond Pressure | 0~3bar (adjustable) |
| Throughput | Depends on the process |
| Chamber Environment | Vacuum Pump included |
| Power Requirements | 220V, 10A |
| Equipment Power | 1KW |
| Size(L×W×H)or(D×W×H) | 650mm×600mm×350mm |
| Weight | 50kg |
| Temperature Range | RT~200℃ |
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