SiC Etcher SA-GDE C200

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SKU: SA-GDE C200

SA-GDE C200 is a high plasma density etcher designed for 6/8-inch SiC power, MEMS and GaAs RF devices, executing SiC trench, via and mark etching. With dual-coil RF source and 2650L/s turbo pump, it reaches 6000A/min SiC etch rate. Y2O3-coated components reduce contamination, delivering long MTBC and reliable mass-production performance for wide-bandgap semiconductors.

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Datasheet

SA-GDE C200 is a high plasma density etcher designed for 6/8-inch SiC power, MEMS and GaAs RF devices, executing SiC trench, via and mark etching. With dual-coil RF source and 2650L/s turbo pump, it reaches 6000A/min SiC etch rate. Y2O3-coated components reduce contamination, delivering long MTBC and reliable mass-production performance for wide-bandgap semiconductors.

Feature	Application
Higher Plasma Density Comparable Higher ER More Stable Longer duration	BAW SiC Power VCSEL MEMS GaN/GaAs RF

Principle：

Specification

Features

Wafer Size	6″, 8″
Etching Materials	SiC, SiO2, SiN, Polymer, AlScN

General

Processes	SiC trench/SiC Via/SiC Mark
Source-RF	Dual coil,13.56MHz
Source Range	3000W+3000W
Bias-RF	13.56MHz
Top Window	Chiller heating
ESC	Dual electrode
Turbo	2650L/s
Gas Injector	Symmetric 8 injectors
Surface Treatement	Y2O3 Coating
Maintain Time	3h
SiC Etch Rate	6000A/min
PA	> 0.2μm < 30ea
MTBC	200RFH
Metal Contamination	Free
Size(L×W×H)	3279mm×3253mm×2339mm

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Power Supply(max.)	10kW
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Film thickness monitoring	Crystal oscillator controller
Ion Source	RF & Kaufman & Hall ion source
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Coating Repeatability	±2%
Uniform Deposition Area(max.)	Ø300 mm
Ultimate Vacuum	1E-5Pa
Vacuum Measurement	Full-range vacuum gauge
Temperature Range	RT~300℃
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Automatic Loadlocks	Single &multi-chip automatic laodlock
Workpiece Angle	-45°~45°，adjustable
Power Supply(max.)	10kW
Film thickness monitoring	Crystal oscillator controller
Ion Source	Kaufman & Hall ion source
Fixture types	Dome & Planetary
Pumping System	Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump
Coating Uniformity	±2%
Coating Repeatability	±2%
Uniform Deposition Area(max.)	Ø300 mm
Ultimate Vacuum	1E-5Pa
Vacuum Measurement	Full-range vacuum gauge
Temperature Range	RT~500℃
Size(L×W×H)	4.0m×3.1m×2.9m

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Workpiece Angle	-45°~45°，adjustable
Film thickness monitoring	Crystal oscillator controller
Ion Source	Kaufman & Hall ion source
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Pumping System	Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump
Coating Uniformity	±3%
Coating Repeatability	±2%
Uniform Deposition Area(max.)	Ø300 mm
Ultimate Vacuum	1E-5Pa
Vacuum Measurement	Full-range vacuum gauge
Temperature Range	-80~200℃
Size(L×W×H)	3.3m×2.7m×2.2m

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Bias	RF / pulsed DC
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Flow Control	Digital mass flow meter
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Vacuum Measurement	Full-range vacuum gauge + ‌Capacitance diaphragm gauge
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Film thickness monitoring	Crystal oscillator controller
Ion Source	Hall ion source
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Coating Uniformity	±3%
Coating Repeatability	±2%
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Ultimate Vacuum	1E-5Pa
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Temperature Range	-50~500℃
Size(L×W×H)	3.15m×2.4m×2.2m

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Wafer Size	6″, 8″
Process	FOX/STI Anneal/Pad-Oxide/Gate Oxide/BPSG Reflow/Final Alloy/Cu Anneal/N2 Anneal/Polyimide Cure
Compatible Materials	SiC, GaN, Si
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AGC	Option
Particle Control	≤20@0.16μm
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Loccalization Progress	Continuous improvement
Size(L×W×H)	4420mm×900mm×3302mm, 4093mm×900mm×3302mm

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SiC Etcher SA-GDE C200

Description

Specification

Features

General

Customer Reviews

Reviews

Related Products

Electron Beam Evaporation System SA-VKE550/E800

Electron Beam Evaporation System SA-VKE800D

Indium Evaporation System SA-VKT550I

Magnetron Sputter System SA-VKM600/M700

Resistance Evaporation System SA-VKT360

Vertical Furnace SA-Flouris X201H/P

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HK office

HK office

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