Ā Ā Ā Ā Ā Ā SA-VKM800 is a high-precision magnetron sputter system. It delivers superior coating uniformity and features low-maintenance design, fulfilling both mass-production and laboratory requirements for high-precision reactive magnetron sputtering and hole-filling processes.Ā
Feature
|
Application
|
Specificationsļ¼
|
Parameter |
Descriptions |
|---|---|
|
Number of Cathode |
4(max.) |
|
Sputtering Power Supply |
DC / RF / pulsed DC, freely switchable |
|
Ion Source |
RF & Kaufman & Hall ion source |
|
Bias |
RF / pulsed DC |
|
Vacuum Sampling Chamber |
Multi-wafer fully-automatic sampling chamber, optional |
|
Pumping System |
Cryopump / magnetically levitated turbo-molecular pump |
|
Flow Control |
Digital mass flow meter |
|
Coating Uniformity |
Ā±1.5% |
|
Coating Repeatability |
Ā±2% |
|
Uniform Deposition Area |
5ĆĆ300āÆmm(max.) |
|
Ultimate Vacuum |
1E-5Pa |
|
Vacuum Measurement |
Full-range vacuum gauge + āCapacitance diaphragm gauge |
|
Temperature Control Range |
-50~800ā |
|
Space Requirements(LĆWĆH,m) |
3.2Ć3.3Ć2.2 |
Ā Ā SA-VKM800 is a high-precision magnetron sputter system. It delivers superior coating uniformity and features low-maintenance design, fulfilling both mass-production and laboratory requirements for high-precision reactive magnetron sputtering and hole-filling processes.
|
Feature |
Application |
|---|---|
|
|
Principleļ¼
Features
| Number of Cathodes(max.) | 4 |
|---|---|
| Uniform Deposition Area(max.) | 5ĆĆ300āÆmm |
| Ultimate Vacuum | 1E-5Pa |
General
| Sputtering Power Supply | DC / RF / pulsed DC, freely switchable |
|---|---|
| Ion Source | RF & Kaufman & Hall ion source |
| Bias | RF / pulsed DC |
| Vacuum Sampling Chamber | Multi-wafer fully-automatic sampling chamber, optional |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Flow Control | Digital mass flow meter |
| Coating Uniformity | Ā±1.5% |
| Coating Repeatability | Ā±2% |
| Vacuum Measurement | Full-range vacuum gauge + āCapacitance diaphragm gauge |
| Temperature Range | -50~800ā |
| Size(LĆWĆH) | 3.2mĆ3.3mĆ2.2m |
In stock
| Processing Position | Patterned material modification and waveguide structures |
|---|---|
| Wavelength | 1030nm, 515nm |
| Objective Lens | 50Ć/20Ć |
| Illumination | Reflection & Transmission |
| Functional Configuration | External energy adjustment, 2D motorized slit |
| Optional | Spatial Light Modulator (SLM), auto-focus tracking |
| Adjustment Stage | Manual |
| Travel Range of Motion Stage | 200āÆmm Ć 200āÆmm |
| Fixture & Workstation | Large-area transparent adsorption stage |
In stock
| Wafer Size | 6″, 8″ |
|---|---|
| Substrate Type | Si, SiC, W, TiN, Ti, TiW |
| Standard Configuration | SMIFĆ3+EFEMĆ1+LLĆ2+TMĆ1+PMĆ3 |
| Wafer Station | Twins chamber, 2 pcs/chamber, max 6pcs for 3 chambers |
| Automation | Open cassette/SMIF |
| Process | SiO2/SiNx/TEOS/BPSG |
| Deposit Materials | SiNx, SiON, TEOS SiO2, BPSG, SiO2 |
| Uniformity | WIW ā¤3.0%ćWTWā¤3.0%ćRTRā¤3.0% |
| Gas Configuration | TEOS/TEPO/TEB/O2/SiH4/NH3/N2O/He/N2/NF3/Ar(RPS) |
| Cooling Module | EFFM cooling buffer |
| Foot print | 2100Ć3360(7.0m2) |
| WPH(relative) | 1.20 |
| CoC(relative) | 0.83 |
| CoO(relative) | 0.75 |
| Clean Mode | RPS clean,>2Ī¼m/min |
| Size(LĆWĆH) | 2100mmĆ3360mmĆ2600mm |
In stock
| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | Si, PolySi |
| Processes | Poly EB/STI/Poly gate/CT Si |
| Coil | Dual Zone |
| Match Mode | L-Match |
| Magnetic Shield | Yes |
| Gas Injector | Dual Zone |
| FRC | Yes |
| Liner | Symmetric Grid |
| Edge Ring | CIP version |
| ESC | Dual Zone |
| ESC Materials | Ceramic |
| Lift Pin | Ceramic |
| Turbo | 1600L/s |
| Chamber | Symmetric |
| Size(LĆWĆH) | 3279mmĆ3253mmĆ2339mm |
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