Ā Ā SA-VKC500 is a production-grade multi-chamber cluster magnetron sputter system. Featuring robust construction, high operational stability and reliability, as well as a highly automated control system, it is capable of meeting mass-production requirements for semiconductor-grade manufacturing.
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Feature |
Application |
|---|---|
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Principleļ¼
Features
| Number of Process Chambers(max.) | 5 |
|---|---|
| Number of Sample Chambers(max.) | 2 |
| Uniform Deposition Area(max.) | Ć300āÆmm |
| Uniform Etching Area(max.) | Ć200āÆmm |
| Ultimate Vacuum | 1E-5Pa |
General
| Process Chamber Type | Sputter & Degas & Pre-clean |
|---|---|
| Autosampling Chamber | Integrated with BROOKS system |
| Ion Source | DC/RF ion source, optional |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Flow Control | Digital mass flow meter |
| Coating Uniformity | Ā±2% |
| Coating Repeatability | Ā±2% |
| Vacuum Measurement | Full-range vacuum gauge + āCapacitance diaphragm gauge |
| Temperature Range | -50~500ā |
| Size(LĆWĆH) | 3.73mĆ2.75mĆ2.2m |
In stock
| Number of Crucibles(max.) | 4 |
|---|---|
| Power Supply(max.) | 10kW |
| Film thickness monitoring | Crystal oscillator controller |
| Ion Source | RF & Kaufman & Hall ion source |
| Fixture types | Dome & Planetary |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Coating Uniformity | Ā±2% |
| Coating Repeatability | Ā±2% |
| Uniform Deposition Area(max.) | Ć960āÆmm |
| Ultimate Vacuum | 1E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge |
| Temperature Range | RT~300ā |
| Size(LĆWĆH) | 4.4mĆ4.1mĆ2.6m |
In stock
| Number of Crucibles(max.) | 8 |
|---|---|
| Power Supply(max.) | 10kW |
| Automatic Loadlocks | Single &multi-chip automatic laodlock |
| Film thickness monitoring | Crystal oscillator controller |
| Ion Source | RF & Kaufman & Hall ion source |
| Fixture types | Dome & Knudsen & Planetary &Plate |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Coating Uniformity | Ā±3% |
| Coating Repeatability | Ā±2% |
| Uniform Deposition Area(max.) | Ć300āÆmm |
| Ultimate Vacuum | 1E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge |
| Temperature Range | RT~300ā |
| Size(LĆWĆH) | 3.35mĆ2.8mĆ2.2m |
In stock
| Processing Position | Patterned material modification and waveguide structures |
|---|---|
| Wavelength | 1030nm, 515nm |
| Objective Lens | 50Ć/20Ć |
| Illumination | Reflection & Transmission |
| Functional Configuration | External energy adjustment, 2D motorized slit |
| Optional | Spatial Light Modulator (SLM), auto-focus tracking |
| Adjustment Stage | Manual |
| Travel Range of Motion Stage | 200āÆmm Ć 200āÆmm |
| Fixture & Workstation | Large-area transparent adsorption stage |
In stock
| Number of Cathodes(max.) | 5 |
|---|---|
| Sputtering Power Supply | DC / RF / pulsed DC, freely switchable |
| Bias | RF / pulsed DC |
| Vacuum Sampling Chamber | Single-wafer / multi-wafer fully-automatic sampling chamber, optional |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Flow Control | Digital mass flow meter |
| Coating Uniformity | Ā±2% |
| Coating Repeatability | Ā±2% |
| Uniform Deposition Area(max.) | Ć300āÆmm |
| Ultimate Vacuum | 8E-6Pa |
| Vacuum Measurement | Full-range vacuum gauge + āCapacitance diaphragm gauge |
| Temperature Range | -50~800ā |
| Size(LĆWĆH) | 3.2mĆ3.3mĆ2.2m |
In stock
| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | SiC, SiO2, SiN, Polymer, AlScN |
| Processes | SiC trench/SiC Via/SiC Mark |
| Source-RF | Dual coil,13.56MHz |
| Source Range | 3000W+3000W |
| Bias-RF | 13.56MHz |
| Top Window | Chiller heating |
| ESC | Dual electrode |
| Turbo | 2650L/s |
| Gas Injector | Symmetric 8 injectors |
| Surface Treatement | Y2O3 Coating |
| Maintain Time | 3h |
| SiC Etch Rate | 6000A/min |
| PA | > 0.2Ī¼m < 30ea |
| MTBC | 200RFH |
| Metal Contamination | Free |
| Size(LĆWĆH) | 3279mmĆ3253mmĆ2339mm |
In stock
| Wafer Size | 6″, 8″ |
|---|---|
| Process | FOX/STI Anneal/Pad-Oxide/Gate Oxide/BPSG Reflow/Final Alloy/Cu Anneal/N2 Anneal/Polyimide Cure |
| Compatible Materials | Si, SiC, GaN |
| Teamperature Control Accuracy | ā¤Ā±1ā |
| Flat Zone Length | 860mm |
| Batch Size | 150/125 |
| SMIF/Open Cassette/OHT | Option |
| N2 Load Lock | Option |
| AGC | Option |
| Particle Control | ā¤20@0.16Ī¼m |
| Uniformity(WIW/WTW/LTL) | ā¤2%/1.5%/1.5% |
| Metal Contamination (ICP-MS/TXRF) | 5E10 |
| Loccalization Progress | Continuous improvement |
| Size(LĆWĆH) | 4420mmĆ900mmĆ3302mm, 4093mmĆ900mmĆ3302mm |
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