Showing 49–55 of 55 results
SiC Etcher SA-GDE C200
In stock
SKU:
SA-GDE C200
| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | AlScN, Polymer, SiC, SiN, SiO2 |
| Processes | SiC trench/SiC Via/SiC Mark |
| Source-RF | Dual coil,13.56MHz |
| Source Range | 3000W+3000W |
| Bias-RF | 13.56MHz |
| Top Window | Chiller heating |
| ESC | Dual electrode |
| Turbo | 2650L/s |
| Gas Injector | Symmetric 8 injectors |
| Surface Treatement | Y2O3 Coating |
| Maintain Time | 3h |
| SiC Etch Rate | 6000A/min |
| PA | > 0.2μm < 30ea |
| MTBC | 200RFH |
| Metal Contamination | Free |
| Size(L×W×H)or(D×W×H) | 3279mm×3253mm×2339mm |
SiC Etcher SA-GDE C200L
In stock
SKU:
SA-GDE C200L
| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | AlScN, Polymer, SiC, SiN, SiO2 |
| Processes | SiC trench/SiC Via/Sic Mark |
| SRF Frequency | 2MHz |
| SRF Power | 2500W |
| SRF Coil | ICP Cubic |
| BRF Frequency | 13.56MHz |
| BRF Power | 1500W |
| Wall | RT~80℃(Adjustable) |
| Upper Electrode | RT~120℃(Adjustable) |
| Bottom Electrode | Clamp chuck:-20~300℃(Max400℃),E chuck:-20~90℃ |
| Wafer Clampage | ESC/Mechanical damp |
| Turbo Pump | BOC,2650L/s |
| Injection | TOP,Center |
| MFC | 8 gas/12 gas |
| EPD | OES/LEP&CCD |
| Surface Treatment | Roughness coating |
| Open Method | Electrical |
Hot
Tomographic Volumetric Bioprinting System SA-VOP
In stock
SKU:
SA-VOP
| Wavelength | 405nm |
|---|---|
| Maximum Processing Size | ø40 mm×120 mm |
| Feature Accuracy | 200 μm |
| Processing Speed | 15 s~5 min/piece |
| Projection Resolution | 4K (3840×2160) |
| Projection Accuracy | 35 µm |
| Working Distance | 188 mm~221 mm |
| Optical Power Density | 64.4 mW/cm2 |
| Maximum Rotation Speed | 200 r/min |
| Minimum Step Angle | 0.02° |
| Angular Transmission Accuracy | 2 arcmin (0.033°) |
| Repeat Positioning Accuracy | ±15 arcsec (0.004°) |
| Allowable Axial Load | 4000 N |
| XYZ Triaxial Stroke | 350 mm×350 mm×100 mm |
| XYZ Triaxial Positioning Accuracy | 0.1 mm |
| Resolution | 2448×2048 |
| Pixel Size | 3.45 µm |
| Maximum Frame Rate | 60.0 fps |
| Processing Structure Type | Arbitrary 3D and 2.5D structures |
| Applicable Consumables | 405 nm-responsive photocurable materials (hydrogel, GelMA, engineering resin, photocurable glass, etc.) |
| Other Functions | Refractive index matching, automatic rotation axis alignment, real-time printing monitoring, automatic material assembly, etc. |
| Size(L×W×H)or(D×W×H) | 600mm×800mm×600mm |
Hot
Ultraviolet Laser Direct-Write Lithography System SA-AOD-M1000
In stock
SKU:
SA-AOD-M1000
| Wavelength | 375nm, 405nm |
|---|---|
| Minimum Feature Size | 300nm |
| Overlay Accuracy | 300nm |
| Focusing Range | 100 μm |
| Long-term Power stability | ±1% |
| Maximum Supported Substrate Size | 8-inch standard wafer, 200 mm × 200 mm planar substrate |
| Supported Substrate Thickness | 0.1 mm ~ 15 mm |
| Maximum Exposure Area | 200 mm × 200 mm |
| Temperature Control Stability | ±0.1°C (core optical cavity constant temperature control) |
| Exposure Grayscale Level | 4096 levels, wi th high-precision exposure dose closed-loop control |
| UV Special Objective Lens | Optional magnification: 5×, 10×, 20×, 50×, 100×; flat-field apochromatic design for UV band; core numerical aperture (NA) fully matches the resolution requirements of each magnification. |
| Pattern Writing Layout Data Preprocessing Software | Supports industry-standard vector layout formats including GDSII and OASIS; provides compatible conversion and preprocessing for bitmap formats (JPG, TIFF, BMP) for auxiliary pattern design; built-in stitching, exposure dose compensation, and Optical Proximity Correction. |
| Electrical Conditions | 230VAC±5%, 50/60 Hz, 16 A,single-phase |
| Environmental Conditions | Temperature: 21±1°C; Relative Humidity: 40%~60%, non-condensing |
| Compressed Air | 6~9 bar, pressure fluctuation ≤ ±0.5 bar; oil-free, water-free, Class 0 clean compressed air; dew point ≤ -20°C |
| Ambient Lighting | Yellow light environment (wavelength > 500 nm), no UV light leakage |
| Cleanroom Requirement | ISO Class 6 (Class 1000) cleanroom |
| Size(L×W×H)or(D×W×H) | 1320mm×1320mm×2000mm |
| Weight | 1100kg |
Vacuum Die Bonder SA-WB061
In stock
SKU:
SA-WB061
| Wafer Size | 150mm, 200mm, 300mm |
|---|---|
| Functions | Timing, pressurization, heating(included), vacuum(included), cooling(included) |
| Bond Pressure | 0~3bar (adjustable) |
| Throughput | Depends on the process |
| Chamber Environment | Vacuum Pump included |
| Power Requirements | 220V, 10A |
| Equipment Power | 1KW |
| Size(L×W×H)or(D×W×H) | 650mm×600mm×350mm |
| Weight | 50kg |
| Temperature Range | RT~200℃ |
Vertical Furnace SA-Flouris X201H/P
In stock
SKU:
SA-Flouris X201H/P
| Wafer Size | 6″, 8″ |
|---|---|
| Process | FOX/STI Anneal/Pad-Oxide/Gate Oxide/BPSG Reflow/Final Alloy/Cu Anneal/N2 Anneal/Polyimide Cure |
| Compatible Materials | GaN, Si, SiC |
| Teamperature Control Accuracy | ≤±1℃ |
| Flat Zone Length | 860mm |
| Batch Size | 150/125 |
| SMIF/Open Cassette/OHT | Option |
| N2 Load Lock | Option |
| AGC | Option |
| Particle Control | ≤20@0.16μm |
| Uniformity(WIW/WTW/LTL) | ≤2%/1.5%/1.5% |
| Metal Contamination (ICP-MS/TXRF) | 5E10 |
| Loccalization Progress | Continuous improvement |
| Size(L×W×H)or(D×W×H) | 4093mm×900mm×3302mm, 4420mm×900mm×3302mm |