Showing 25–29 of 29 results
Reactive Magnetron Sputter System SA-VKV500
In stock
SKU:
SA-VKV500
| Number of Cathodes(max.) | 2 |
|---|---|
| Sputtering Power Supply | DC / RF / pulsed DC, freely switchable |
| Ion Source | RF & Kaufman & Hall ion source |
| Bias | RF / pulsed DC |
| Vacuum Sampling Chamber | Single-wafer/multi-wafer fully-automatic sampling chamber, optional |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Flow Control | Digital mass flow meter |
| Coating Uniformity | ±2% |
| Coating Repeatability | ±2% |
| Uniform Deposition Area(max.) | Ø200 mm |
| Ultimate Vacuum | 1E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge + Capacitance diaphragm gauge |
| Temperature Range | -50~800℃ |
| Size(L×W×H) | 3.8m×2.8m×2.2m |
Resistance Evaporation System SA-VKT360
In stock
SKU:
SA-VKT360
| Power Supply(max.) | 8kW |
|---|---|
| Automatic Loadlocks | Single &multi-chip automatic laodlock |
| Workpiece Angle | -45°~45°，adjustable |
| Film thickness monitoring | Crystal oscillator controller |
| Ion Source | Hall ion source |
| Fixture types | Dome & Knudsen & Plate |
| Pumping System | Cryopump / magnetically levitated turbo-molecular pump + Dry mechanical pump |
| Coating Uniformity | ±3% |
| Coating Repeatability | ±2% |
| Uniform Deposition Area(max.) | Ø200 mm |
| Ultimate Vacuum | 1E-5Pa |
| Vacuum Measurement | Full-range vacuum gauge |
| Temperature Range | -50~500℃ |
| Size(L×W×H) | 3.15m×2.4m×2.2m |
SiC Etcher SA-GDE C200
In stock
SKU:
SA-GDE C200
| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | AlScN, Polymer, SiC, SiN, SiO2 |
| Processes | SiC trench/SiC Via/SiC Mark |
| Source-RF | Dual coil,13.56MHz |
| Source Range | 3000W+3000W |
| Bias-RF | 13.56MHz |
| Top Window | Chiller heating |
| ESC | Dual electrode |
| Turbo | 2650L/s |
| Gas Injector | Symmetric 8 injectors |
| Surface Treatement | Y2O3 Coating |
| Maintain Time | 3h |
| SiC Etch Rate | 6000A/min |
| PA | > 0.2μm < 30ea |
| MTBC | 200RFH |
| Metal Contamination | Free |
| Size(L×W×H) | 3279mm×3253mm×2339mm |
SiC Etcher SA-GDE C200L
In stock
SKU:
SA-GDE C200L
| Wafer Size | 6″, 8″ |
|---|---|
| Etching Materials | AlScN, Polymer, SiC, SiN, SiO2 |
| Processes | SiC trench/SiC Via/Sic Mark |
| SRF Frequency | 2MHz |
| SRF Power | 2500W |
| SRF Coil | ICP Cubic |
| BRF Frequency | 13.56MHz |
| BRF Power | 1500W |
| Wall | RT~80℃(Adjustable) |
| Upper Electrode | RT~120℃(Adjustable) |
| Bottom Electrode | Clamp chuck:-20~300℃(Max400℃),E chuck:-20~90℃ |
| Wafer Clampage | ESC/Mechanical damp |
| Turbo Pump | BOC,2650L/s |
| Injection | TOP,Center |
| MFC | 8 gas/12 gas |
| EPD | OES/LEP&CCD |
| Surface Treatment | Roughness coating |
| Open Method | Electrical |
Vertical Furnace SA-Flouris X201H/P
In stock
SKU:
SA-Flouris X201H/P
| Wafer Size | 6″, 8″ |
|---|---|
| Process | FOX/STI Anneal/Pad-Oxide/Gate Oxide/BPSG Reflow/Final Alloy/Cu Anneal/N2 Anneal/Polyimide Cure |
| Compatible Materials | GaN, Si, SiC |
| Teamperature Control Accuracy | ≤±1℃ |
| Flat Zone Length | 860mm |
| Batch Size | 150/125 |
| SMIF/Open Cassette/OHT | Option |
| N2 Load Lock | Option |
| AGC | Option |
| Particle Control | ≤20@0.16μm |
| Uniformity(WIW/WTW/LTL) | ≤2%/1.5%/1.5% |
| Metal Contamination (ICP-MS/TXRF) | 5E10 |
| Loccalization Progress | Continuous improvement |
| Size(L×W×H) | 4093mm×900mm×3302mm, 4420mm×900mm×3302mm |